Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs
Takashima, Shinya, Zhongda Li, Chow, T. Paul
Published in IEEE transactions on electron devices (01.10.2013)
Published in IEEE transactions on electron devices (01.10.2013)
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Journal Article
Mitochondrial ferritin alleviates apoptosis by enhancing mitochondrial bioenergetics and stimulating glucose metabolism in cerebral ischemia reperfusion
Wang, Peina, Cui, Yanmei, Liu, Yuanyuan, Li, Zhongda, Bai, Huiyuan, Zhao, Yashuo, Chang, Yan-Zhong
Published in Redox biology (01.11.2022)
Published in Redox biology (01.11.2022)
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Journal Article
Cdh5-mediated Fpn1 deletion exerts neuroprotective effects during the acute phase and inhibitory effects during the recovery phase of ischemic stroke
Zheng, Huiwen, Guo, Xin, Kang, Shaomeng, Li, Zhongda, Tian, Tian, Li, Jianhua, Wang, Fudi, Yu, Peng, Chang, Shiyang, Chang, Yan-zhong
Published in Cell death & disease (25.02.2023)
Published in Cell death & disease (25.02.2023)
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Journal Article
Impact of annealing on ALD Al2O3 gate dielectric for GaN MOS devices
Marron, Thomas, Takashima, Shinya, Li, Zhongda, Chow, T. Paul
Published in Physica status solidi. C (01.03.2012)
Published in Physica status solidi. C (01.03.2012)
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Journal Article
Avalanche Breakdown Design Parameters in GaN
Li, Zhongda, Pala, Vipindas, Chow, T. Paul
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
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Journal Article
Robustness of GaN vertical superjunction HEMT
Zhongda Li, Chow, T. Paul
Published in 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2013)
Published in 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2013)
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Conference Proceeding
High voltage normally-off GaN MOSC-HEMTs on silicon substrates for power switching applications
Zhongda Li, Waldron, John, Dayal, Rohan, Parsa, Leila, Hella, Mona, Chow, T. Paul
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
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Conference Proceeding
Over 1000 V/30 mA operation GaN-on-Si MOSFETs fabricated on Si substrates
NIIYAMA, Yuki, ZHONGDA LI, CHOW, T. Paul, JIANG LI, NOMURA, Takehiko, KATO, Sadahiro
Published in Solid-state electronics (01.02.2011)
Published in Solid-state electronics (01.02.2011)
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Journal Article
Behavioral Modeling of A High-Resolution Sigma-Delta ADC
Zhongda, Li, Huiming, Zeng, Haoyang, Zhao
Published in 2022 10th International Symposium on Next-Generation Electronics (ISNE) (12.05.2023)
Published in 2022 10th International Symposium on Next-Generation Electronics (ISNE) (12.05.2023)
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Conference Proceeding
Channel scaling of hybrid GaN MOS-HEMTs
Zhongda Li, Chow, T P
Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
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Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
Conference Proceeding
Financial globalization, domestic financial freedom and risk sharing across countries
Li, Zhongda, Liu, Lu
Published in Journal of international financial markets, institutions & money (01.07.2018)
Published in Journal of international financial markets, institutions & money (01.07.2018)
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Journal Article