Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
Galatage, R. V., Zhernokletov, D. M., Dong, H., Brennan, B., Hinkle, C. L., Wallace, R. M., Vogel, E. M.
Published in Journal of applied physics (07.07.2014)
Published in Journal of applied physics (07.07.2014)
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Journal Article
In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution
MCDONNELL, S, ZHERNOKLETOV, D. M, KIRK, A. P, KIM, J, WALLACE, R. M
Published in Applied surface science (01.08.2011)
Published in Applied surface science (01.08.2011)
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New insights in the passivation of high- k /InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of crystal orientation
Xu, Min, Gu, Jiangjiang J., Wang, Chen, Zhernokletov, D. M., Wallace, R. M., Ye, Peide D.
Published in Journal of applied physics (07.01.2013)
Published in Journal of applied physics (07.01.2013)
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Journal Article
High-k Oxide Growth on III-V Surfaces: Chemical Bonding and MOSFET Performance
Hinkle, Christopher, Brennan, Barry, McDonnell, Stephen, Milojevic, Marko, Sonnet, Arif, Zhernokletov, Dmitry, Galatage, Rohit, Vogel, Eric, Wallace, Robert
Published in ECS transactions (01.01.2011)
Published in ECS transactions (01.01.2011)
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