Dislocations and stacking faults in hexagonal GaN
Batyrev, I. G., Sarney, W. L., Zheleva, T. S., Nguyen, C., Rice, B. M., Jones, K. A.
Published in Physica status solidi. A, Applications and materials science (01.07.2011)
Published in Physica status solidi. A, Applications and materials science (01.07.2011)
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Journal Article
Growth of GaN films on PLD-deposited TaC substrates
Kirchner, K.W., Derenge, M.A., Zheleva, T.S., Vispute, R.D., Jones, K.A.
Published in Journal of crystal growth (15.09.2010)
Published in Journal of crystal growth (15.09.2010)
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Journal Article
Structural and Chemical Comparison of Graphite and BN/AlN Caps Used for Annealing Ion Implanted SiC
Jones, K.A., Wood, M.C., Zheleva, T.S., Kirchner, K.W., Derenge, M.A., Bolonikov, A., Sudarshan, T.S., Vispute, R.D., Hullavarad, S.S., Dhar, S.
Published in Journal of electronic materials (01.06.2008)
Published in Journal of electronic materials (01.06.2008)
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Journal Article
Pendeo-epitaxy : A new approach for lateral growth of gallium nitride films
ZHELEVA, T. S, SMITH, S. A, THOMSON, D. B, LINTHICUM, K. J, RAJAGOPAL, P, DAVIS, R. F
Published in Journal of electronic materials (01.04.1999)
Published in Journal of electronic materials (01.04.1999)
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Journal Article
Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization
Davis, Robert F., Gehrke, T., Linthicum, K.J., Zheleva, T.S., Preble, E.A., Rajagopal, P., Zorman, C.A., Mehregany, M.
Published in Journal of crystal growth (01.05.2001)
Published in Journal of crystal growth (01.05.2001)
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Journal Article
Conference Proceeding
A comparison of graphite and AlN caps used for annealing ion-implanted SiC
JONES, K. A, DERENGE, M. A, VISPUTE, R. D, SHAH, P. B, ZHELEVA, T. S, ERVIN, M. H, KIRCHNER, K. W, WOOD, M. C, THOMAS, C, SPENCER, M. G, HOLLAND, O. W
Published in Journal of electronic materials (01.06.2002)
Published in Journal of electronic materials (01.06.2002)
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Journal Article
The properties of annealed AlN films deposited by pulsed laser deposition
Jones, K. A., Derenge, M. A., Zheleva, T. S., Kirchner, K. W., Ervin, M. H., Wood, M. C., Vispute, R. D., Sharma, R. P., Venkatesan, T.
Published in Journal of electronic materials (01.03.2000)
Published in Journal of electronic materials (01.03.2000)
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Journal Article
Characterization with TEM of AlN/GaN Heterostructures for Implant Activation Annealing
Zheleva, TS, Hager, CE, Jones, KA, Derenge, MA
Published in Microscopy and microanalysis (01.08.2008)
Published in Microscopy and microanalysis (01.08.2008)
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Journal Article
Carbon Nanotube - Substrate Interface Characteristics Studied via TEM
Zheleva, TS, Kilpatrick, SJ, Ervin, MH, Li, X, Cao, A, Ajayan, PM
Published in Microscopy and microanalysis (01.08.2006)
Published in Microscopy and microanalysis (01.08.2006)
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Journal Article
Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC
Ruppalt, L.B., Stafford, S., Yuan, D., Jones, K.A., Ervin, M.H., Kirchner, K.W., Zheleva, T.S., Wood, M.C., Geil, B.R., Forsythe, E., Vispute, R.D., Venkatesan, T.
Published in Solid-state electronics (01.02.2003)
Published in Solid-state electronics (01.02.2003)
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Journal Article
Structural and Chemical Comparison of Graphite and BN/AIN Caps Used for Annealing Ion Implanted SiC
Jones, KA, Wood, M C, Zheleva, T S, Kirchner, K W, Derenge, M A, Bolonikov, A, Sudarshan, T S, Vispute, R D, Hullavarad, S S, Dhar, S
Published in Journal of electronic materials (01.06.2008)
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Published in Journal of electronic materials (01.06.2008)
Journal Article
A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphere
Derenge, M.A., Jones, K.A., Kirchner, K.W., Ervin, M.H., Zheleva, T.S., Hullavarad, S., Vispute, R.D.
Published in Solid-state electronics (01.10.2004)
Published in Solid-state electronics (01.10.2004)
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Journal Article
A comparison of graphite and AIN caps used for annealing ion-implanted SiC
Jones, K A, Derenge, M A, Shah, P B, Zheleva, T S
Published in Journal of electronic materials (01.06.2002)
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Published in Journal of electronic materials (01.06.2002)
Journal Article
Electrical Contact Resistance of Bismuth Telluride Nanowires
Jones, P., Huber, T.E., Melngailis, J., Barry, J., Ervin, M.H., Zheleva, T.S., Nikolaeva, A., Konopko, L., Graf, M.
Published in 2006 25th International Conference on Thermoelectrics (01.08.2006)
Published in 2006 25th International Conference on Thermoelectrics (01.08.2006)
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Conference Proceeding
The properties of annealed AIN films deposited by pulsed laser deposition
Jones, K A, Derenge, M A, Zheleva, T S, Kirchner, K W
Published in Journal of electronic materials (01.03.2000)
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Published in Journal of electronic materials (01.03.2000)
Journal Article
Lateral epitaxy and dislocation density reduction in selectively grown GaN structures
Zheleva, Tsvetanka S., Nam, Ok-Hyun, Ashmawi, Waeil M., Griffin, Jason D., Davis, Robert F.
Published in Journal of crystal growth (01.02.2001)
Published in Journal of crystal growth (01.02.2001)
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Journal Article
The properties of annealed AlN films deposited by pulsed laser deposition: Special issue on III-IV Nitrides and Silicon Carbide
JONES, K. A, DERENGE, M. A, ZHELEVA, T. S, KIRCHNER, K. W, ERVIN, M. H, WOOD, M. C, VISPUTE, R. D, SHARMA, R. P, VENKATESAN, T
Published in Journal of electronic materials (2000)
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Published in Journal of electronic materials (2000)
Journal Article