Dislocations and stacking faults in hexagonal GaN
Batyrev, I. G., Sarney, W. L., Zheleva, T. S., Nguyen, C., Rice, B. M., Jones, K. A.
Published in Physica status solidi. A, Applications and materials science (01.07.2011)
Published in Physica status solidi. A, Applications and materials science (01.07.2011)
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Journal Article
Growth of GaN films on PLD-deposited TaC substrates
Kirchner, K.W., Derenge, M.A., Zheleva, T.S., Vispute, R.D., Jones, K.A.
Published in Journal of crystal growth (15.09.2010)
Published in Journal of crystal growth (15.09.2010)
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Journal Article
Pendeo-epitaxy : A new approach for lateral growth of gallium nitride films
ZHELEVA, T. S, SMITH, S. A, THOMSON, D. B, LINTHICUM, K. J, RAJAGOPAL, P, DAVIS, R. F
Published in Journal of electronic materials (01.04.1999)
Published in Journal of electronic materials (01.04.1999)
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Journal Article
Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization
Davis, Robert F., Gehrke, T., Linthicum, K.J., Zheleva, T.S., Preble, E.A., Rajagopal, P., Zorman, C.A., Mehregany, M.
Published in Journal of crystal growth (01.05.2001)
Published in Journal of crystal growth (01.05.2001)
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Journal Article
Conference Proceeding
Structural and Chemical Comparison of Graphite and BN/AlN Caps Used for Annealing Ion Implanted SiC
Jones, K.A., Wood, M.C., Zheleva, T.S., Kirchner, K.W., Derenge, M.A., Bolonikov, A., Sudarshan, T.S., Vispute, R.D., Hullavarad, S.S., Dhar, S.
Published in Journal of electronic materials (01.06.2008)
Published in Journal of electronic materials (01.06.2008)
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Journal Article
Advances in Pulsed-Laser-Deposited AlN Thin Films for High-Temperature Capping, Device Passivation, and Piezoelectric-Based RF MEMS/NEMS Resonator Applications
Hullavarad, S S, Vispute, R D, Nagaraj, B, Kulkarni, V N
Published in Journal of electronic materials (01.04.2006)
Published in Journal of electronic materials (01.04.2006)
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Journal Article
Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates
Perry, William G., Zheleva, T., Bremser, M. D., Davis, R. F., Shan, W., Song, J. J.
Published in Journal of electronic materials (01.03.1997)
Published in Journal of electronic materials (01.03.1997)
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Journal Article
A comparison of graphite and AlN caps used for annealing ion-implanted SiC
JONES, K. A, DERENGE, M. A, VISPUTE, R. D, SHAH, P. B, ZHELEVA, T. S, ERVIN, M. H, KIRCHNER, K. W, WOOD, M. C, THOMAS, C, SPENCER, M. G, HOLLAND, O. W
Published in Journal of electronic materials (01.06.2002)
Published in Journal of electronic materials (01.06.2002)
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Journal Article
Characterization of zirconium nitride coatings deposited by cathodic arc sputtering
Gruss, K.A., Zheleva, T., Davis, R.F., Watkins, T.R.
Published in Surface & coatings technology (10.09.1998)
Published in Surface & coatings technology (10.09.1998)
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Journal Article
Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications
Hullavarad, S. S., Vispute, R. D., Nagaraj, B., Kulkarni, V. N., Dhar, S., Venkatesan, T., Jones, K. A., Derenge, M., Zheleva, T., Ervin, M. H., Lelis, A., Scozzie, C. J., Habersat, D., Wickenden, A. E., Currano, L. J., Dubey, M.
Published in Journal of electronic materials (01.04.2006)
Published in Journal of electronic materials (01.04.2006)
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Journal Article
Biaxial strain in AlxGa1-xN/GaN layers deposited on 6H-SiC
PERRY, W. G, BREMSER, M. B, ZHELEVA, T, LINTHICUM, K. J, DAVIS, R. F
Published in Thin solid films (01.07.1998)
Published in Thin solid films (01.07.1998)
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Journal Article
Characterization with TEM of AlN/GaN Heterostructures for Implant Activation Annealing
Zheleva, TS, Hager, CE, Jones, KA, Derenge, MA
Published in Microscopy and microanalysis (01.08.2008)
Published in Microscopy and microanalysis (01.08.2008)
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Journal Article
The properties of annealed AlN films deposited by pulsed laser deposition
Jones, K. A., Derenge, M. A., Zheleva, T. S., Kirchner, K. W., Ervin, M. H., Wood, M. C., Vispute, R. D., Sharma, R. P., Venkatesan, T.
Published in Journal of electronic materials (01.03.2000)
Published in Journal of electronic materials (01.03.2000)
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Journal Article
Realization of improved metallization-Ti/Al/Ti/W/Au ohmic contacts to n-GaN for high temperature application
Motayed, A., Davydov, A.V., Boettinger, W. J., Josell, D., Shapiro, A.J., Levin, I., Zheleva, T., Harris, G. L.
Published in Physica status solidi. C (01.05.2005)
Published in Physica status solidi. C (01.05.2005)
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Journal Article
Carbon Nanotube - Substrate Interface Characteristics Studied via TEM
Zheleva, TS, Kilpatrick, SJ, Ervin, MH, Li, X, Cao, A, Ajayan, PM
Published in Microscopy and microanalysis (01.08.2006)
Published in Microscopy and microanalysis (01.08.2006)
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Journal Article
Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC
Ruppalt, L.B., Stafford, S., Yuan, D., Jones, K.A., Ervin, M.H., Kirchner, K.W., Zheleva, T.S., Wood, M.C., Geil, B.R., Forsythe, E., Vispute, R.D., Venkatesan, T.
Published in Solid-state electronics (01.02.2003)
Published in Solid-state electronics (01.02.2003)
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Journal Article
Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy
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Journal Article
Conference Proceeding
Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates
Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., Therrien, R. J., Davis, R. F.
Published in Journal of electronic materials (01.04.1998)
Published in Journal of electronic materials (01.04.1998)
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