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"ZHANG CHANGSHA"
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"ZHANG CHANGSHA"
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Silicon carbide MOSFET capable of reducing gate charge
by
ZHANG CHANGSHA
,
LI YUNJI
,
SHAN TIWEI
Year of Publication
10.01.2023
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Preparation method of asymmetric silicon carbide trench gate VDMOS
by
SHI GUANGYAN
,
HU HUINA
,
ZHANG CHANGSHA
,
LI YUNJI
Year of Publication
27.08.2024
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43
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Manufacturing method of trench type silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) with low body diode forward conduction voltage drop
by
ZHANG CHANGSHA
,
LI YUNJI
,
ZHOU HAI
Year of Publication
22.11.2022
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44
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Silicon carbide UMOSFET integrated with Schottky
by
HE JIA
,
ZHANG CHANGSHA
,
LI YUNJI
,
LI JIASHUAI
Year of Publication
09.08.2024
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45
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Manufacturing method of low-speed anti-EMI silicon carbide MOSFET
by
ZHANG CHANGSHA
,
LI YUNJI
,
SHAN TIWEI
Year of Publication
04.11.2022
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46
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Silicon carbide groove MOS (Metal Oxide Semiconductor) gate-controlled thyristor with four layers of epitaxy
by
ZHANG CHANGSHA
,
CHEN TONG
,
LI YUNJI
,
YANG GUANGRUI
Year of Publication
01.11.2022
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47
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Low-speed anti-EMI silicon carbide MOSFET
by
ZHANG CHANGSHA
,
LI YUNJI
,
SHAN TIWEI
Year of Publication
01.11.2022
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Silicon carbide groove MOS (Metal Oxide Semiconductor) gate-controlled thyristor with three layers of epitaxy
by
ZHANG CHANGSHA
,
CHEN TONG
,
LI YUNJI
,
YANG GUANGRUI
Year of Publication
01.11.2022
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49
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P-type SiC LDMOS power device
by
HE JIA
,
ZHANG YUJIE
,
ZHANG CHANGSHA
Year of Publication
23.09.2022
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50
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Manufacturing method of silicon carbide MOSFET capable of reducing gate charge
by
ZHANG CHANGSHA
,
LI YUNJI
,
SHAN TIWEI
Year of Publication
20.09.2022
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Manufacturing method of silicon carbide MOSFET capable of improving voltage endurance capability
by
HE JIA
,
ZHANG CHANGSHA
,
CHEN TONG
,
SHAN TIWEI
Year of Publication
20.09.2022
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Manufacturing method of silicon carbide MOSFET with adjustable charge balance threshold voltage
by
HE JIA
,
ZHANG YUJIE
,
ZHANG CHANGSHA
,
SHAN TIWEI
Year of Publication
20.09.2022
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Electronic equipment charging device based on silicon carbide power device
by
HE JIA
,
ZHANG CHANGSHA
,
XIAO LI
Year of Publication
06.09.2022
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54
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Manufacturing method of silicon carbide MOSFET with voltage-withstanding structure
by
ZHANG CHANGSHA
,
ZHOU HAI
,
LI JIASHUAI
,
SHAN TIWEI
Year of Publication
02.09.2022
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55
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Manufacturing method of silicon carbide groove MOS (Metal Oxide Semiconductor) gate-controlled thyristor with three layers of epitaxy
by
ZHANG CHANGSHA
,
CHEN TONG
,
LI YUNJI
,
YANG GUANGRUI
Year of Publication
22.07.2022
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56
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Manufacturing method of silicon carbide groove MOS (Metal Oxide Semiconductor) gate-controlled thyristor with four layers of epitaxy
by
ZHANG CHANGSHA
,
CHEN TONG
,
LI YUNJI
,
YANG GUANGRUI
Year of Publication
22.07.2022
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57
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Manufacturing method of P-type SiC LDMOS power device
by
HE JIA
,
ZHANG YUJIE
,
ZHANG CHANGSHA
Year of Publication
12.07.2022
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58
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Manufacturing method of silicon carbide UMOSFET integrated with Schottky
by
HE JIA
,
ZHANG CHANGSHA
,
LI YUNJI
,
LI JIASHUAI
Year of Publication
21.03.2023
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59
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Silicon carbide MOSFET capable of improving current capability
by
HE JIA
,
ZHANG YUJIE
,
ZHANG CHANGSHA
,
LI JIASHUAI
Year of Publication
10.01.2023
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Double-groove type silicon carbide MOSFET
by
HE JIA
,
ZHANG CHANGSHA
,
LI YUNJI
,
LI JIASHUAI
Year of Publication
10.01.2023
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