Effect of fluoride layer thickness on the leakage current in Au/CaF2/Si(111) heterostructures
Banshchikov, A.G., Dvortsova, P.A., Illarionov, Yu.Yu, Ivanov, I.A., Sokolov, N.S., Suturin, S.M., Vexler, M.I., Yusupova, Sh.A.
Published in Thin solid films (31.10.2023)
Published in Thin solid films (31.10.2023)
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Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding
Grekhov, I. V., Kostina, L. S., Argunova, T. S., Belyakova, E. I., Rozkov, A. V., Shmidt, N. M., Yusupova, Sh. A., Je, J. H.
Published in Semiconductors (Woodbury, N.Y.) (01.08.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.08.2010)
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The formation of shallow-donor distribution profiles in proton irradiation of silicon
Grekhov, I. V., Kostina, L. S., Lomasov, V. N., Yusupova, Sh. A., Belyakova, E. I.
Published in Technical physics letters (01.12.2014)
Published in Technical physics letters (01.12.2014)
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Current-voltage characteristics of Si/Si1 − x Ge x heterodiodes fabricated by direct bonding
Grekhov, I. V., Belyakova, E. I., Kostina, L. S., Rozhkov, A. V., Yusupova, Sh. A., Sorokin, L. M., Argunova, T. S., Abrosimov, N. V., Matchanov, N. A., Je, J. H.
Published in Technical physics letters (01.12.2008)
Published in Technical physics letters (01.12.2008)
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Impurity centers of rare-earth ions (Eu, Sm, Er) in GaN wurtzite crystals
Krivolapchuk, V. V., Kozhanova, Yu. V., Lundin, V. V., Mezdrogina, M. M., Rodin, S. N., Yusupova, Sh. A.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2004)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2004)
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The absorption spectra of gallium nitride crystals doped with erbium ions
Krivolapchuk, V. V., Mezdrogina, M. M., Raevskii, S. D., Skvortsov, A. P., Yusupova, Sh. A.
Published in Technical physics letters (01.04.2002)
Published in Technical physics letters (01.04.2002)
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Bulk large-area GaN layers
Zhilyaev, Yu. V., Nasonov, A. V., Raevskii, S. D., Rodin, S. N., Shcheglov, M. P., Yusupova, Sh. A., Davydov, V. Yu
Published in Technical physics letters (01.05.2003)
Published in Technical physics letters (01.05.2003)
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Optical characterization of ultra-pure GaAs
Zhilyaev, Yu. V., Poletaev, N. K., Botnaryuk, V. M., Orlova, T. A., Fedorov, L. M., Yusupova, Sh. A., Owens, A., Bavdaz, M., Peacock, A., O'Meara, B., Helava, H.
Published in Physica status solidi. C (01.02.2003)
Published in Physica status solidi. C (01.02.2003)
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Growth and properties of single crystals of Si1 − x Ge x (0 < x < 0.35) solid solutions
Atabaev, I. G., Matchanov, N. A., Khazhiev, M. U., Yusupova, Sh. A.
Published in Technical physics letters (01.02.2010)
Published in Technical physics letters (01.02.2010)
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Journal Article
Current-voltage characteristics of Si/Si1 − xGex heterodiodes fabricated by direct bonding
Grekhov, I. V., Belyakova, E. I., Kostina, L. S., Rozhkov, A. V., Yusupova, Sh. A., Sorokin, L. M., Argunova, T. S., Abrosimov, N. V., Matchanov, N. A., Je, J. H.
Published in Technical physics letters (2008)
Published in Technical physics letters (2008)
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