Simulation Study of the Instability Induced by the Variation of Grain Boundary Width and Trap Density in Gate-All-Around Polysilicon Transistor
Lin, Po-Jui, Chiu, Yung-Yueh, Chen, Frederick, Shirota, Riichiro
Published in IEEE transactions on electron devices (01.04.2021)
Published in IEEE transactions on electron devices (01.04.2021)
Get full text
Journal Article
Impact of Program/Erase Cycling Interval on the Transconductance Distribution of NAND Flash Memory Devices
Chiu, Yung-Yueh, Chang, Kai-Chieh, Lin, Hsin-Jyun, Tsai, Hung-Te-En, Lin, Po-Jui, Li, Hsin-Chiao, Takeshita, Toshiaki, Yano, Masaru, Shirota, Riichiro
Published in IEEE transactions on electron devices (01.11.2020)
Published in IEEE transactions on electron devices (01.11.2020)
Get full text
Journal Article
Transconductance Distribution in Program/Erase Cycling of NAND Flash Memory Devices: a Statistical Investigation
Chiu, Yung-Yueh, Lin, I-Chun, Chang, Kai-Chieh, Yang, Bo-Jun, Takeshita, Toshiaki, Yano, Masaru, Shirota, Riichiro
Published in IEEE transactions on electron devices (01.03.2019)
Published in IEEE transactions on electron devices (01.03.2019)
Get full text
Journal Article
The origin of oxide degradation during time interval between program/erase cycles in NAND Flash memory devices
Chiu, Yung-Yueh, Tsai, Hung-Te-En, Chang, Kai-Chieh, Kumari, Roshni, Li, Hsin-Chiao, Takeshita, Toshiaki, Yano, Masaru, Shirota, Riichiro
Published in Japanese Journal of Applied Physics (01.07.2021)
Published in Japanese Journal of Applied Physics (01.07.2021)
Get full text
Journal Article
Evaluation of the Role of Deep Trap State Using Analytical Model in the Program/Erase Cycling of NAND Flash Memory and Its Process Dependence
Bo-Jun Yang, Yu-Ting Wu, Yung-Yueh Chiu, Tse-Mien Kuo, Jung-Ho Chang, Pin-Yao Wang, Shirota, Riichiro
Published in IEEE transactions on electron devices (01.02.2018)
Published in IEEE transactions on electron devices (01.02.2018)
Get full text
Journal Article
Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs
Get full text
Journal Article
Conference Proceeding
Characterization of the charge trapping properties in p-channel silicon-oxide-nitride-oxide-silicon memory devices including SiO2/Si3N4 interfacial transition layer
Chiu, Yung-Yueh, Yang, Bo-Jun, Li, Fu-Hai, Chang, Ru-Wei, Sun, Wein-Town, Lo, Chun-Yuan, Hsu, Chia-Jung, Kuo, Chao-Wei, Shirota, Riichiro
Published in Japanese Journal of Applied Physics (01.10.2015)
Published in Japanese Journal of Applied Physics (01.10.2015)
Get full text
Journal Article
Study Trapped Charge Distribution in P-Channel Silicon--Oxide--Nitride--Oxide--Silicon Memory Device Using Dynamic Programming Scheme
Li, Fu-Hai, Chiu, Yung-Yueh, Lee, Yen-Hui, Chang, Ru-Wei, Yang, Bo-Jun, Sun, Wein-Town, Lee, Eric, Kuo, Chao-Wei, Shirota, Riichiro
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
Get full text
Journal Article
The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memories
Chiu, Yung-Yueh, Lin, Cheng-Han, Yang, Jhih-Siang, Yang, Bo-Jun, Aoki, Minoru, Takeshita, Toshiaki, Yano, Masaru, Shirota, Riichiro
Published in Japanese Journal of Applied Physics (01.08.2019)
Published in Japanese Journal of Applied Physics (01.08.2019)
Get full text
Journal Article
Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal--Oxide--Semiconductor Field-Effect-Transistor Devices
Li, Yiming, Lee, Kuo-Fu, Yiu, Chun-Yen, Chiu, Yung-Yueh, Chang, Ru-Wei
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
Get full text
Journal Article
Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal–Oxide–Semiconductor Field-Effect-Transistor Devices
Li, Yiming, Lee, Kuo-Fu, Yiu, Chun-Yen, Chiu, Yung-Yueh, Chang, Ru-Wei
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
Get full text
Journal Article
Correlation between interface traps and random dopants in emerging MOSFETs
Yung-Yueh Chiu, Yiming Li, Hui-Wen Cheng
Published in 2011 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2011)
Published in 2011 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2011)
Get full text
Conference Proceeding
Electrical characteristic fluctuation of 16 nm MOSFETs induced by random dopants and interface traps
Hui-Wen Cheng, Yung-Yueh Chiu, Yiming Li
Published in 2011 IEEE International Conference on IC Design & Technology (01.05.2011)
Published in 2011 IEEE International Conference on IC Design & Technology (01.05.2011)
Get full text
Conference Proceeding
Effects of Hydrogen on Endurance Characteristics in NAND Flash Memories
Chiu, Yung-Yueh, Liu, Wen-Chien, Chen, Yu-Jung, Kumaria, Roshni, Takeshita, Toshiaki, Yano, Masaru, Shirota, Riichiro
Published in ECS Advances (07.12.2022)
Published in ECS Advances (07.12.2022)
Get full text
Journal Article
DC/AC characteristic fluctuations induced by interface traps and random dopants of high-κ / metal-gate devices
Hui-Wen Cheng, Yung-Yueh Chiu, Yiming Li
Published in The 4th IEEE International NanoElectronics Conference (01.06.2011)
Published in The 4th IEEE International NanoElectronics Conference (01.06.2011)
Get full text
Conference Proceeding
Characterization of the charge trapping properties in p-channel silicon-oxide-nitride-oxide-silicon memory devices including SiO sub(2)/Si sub(3) N sub(4) interfacial transition layer
Chiu, Yung-Yueh, Yang, Bo-Jun, Li, Fu-Hai, Chang, Ru-Wei, Sun, Wein-Town, Lo, Chun-Yuan, Hsu, Chia-Jung, Kuo, Chao-Wei, Shirota, Riichiro
Published in Japanese Journal of Applied Physics (01.10.2015)
Published in Japanese Journal of Applied Physics (01.10.2015)
Get full text
Journal Article
Characterization of the charge trapping properties in p-channel silicon–oxide–nitride–oxide–silicon memory devices including SiO 2 /Si 3 N 4 interfacial transition layer
Chiu, Yung-Yueh, Yang, Bo-Jun, Li, Fu-Hai, Chang, Ru-Wei, Sun, Wein-Town, Lo, Chun-Yuan, Hsu, Chia-Jung, Kuo, Chao-Wei, Shirota, Riichiro
Published in Japanese Journal of Applied Physics (01.10.2015)
Published in Japanese Journal of Applied Physics (01.10.2015)
Get full text
Journal Article