AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
Yen-Ku Lin, Noda, Shuichi, Hsiao-Chieh Lo, Shih-Chien Liu, Chia-Hsun Wu, Yuen-Yee Wong, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Samukawa, Seiji, Chang, Edward Yi
Published in IEEE electron device letters (01.11.2016)
Published in IEEE electron device letters (01.11.2016)
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Journal Article
The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE
Wong, Yuen-Yee, Chang, Edward Yi, Yang, Tsung-Hsi, Chang, Jet-Rung, Ku, Jui-Tai, Hudait, Mantu K., Chou, Wu-Ching, Chen, Micheal, Lin, Kung-Liang
Published in Journal of the Electrochemical Society (2010)
Published in Journal of the Electrochemical Society (2010)
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Journal Article
Corrections to "AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications" [Nov 16 1395-1398]
Yen-Ku Lin, Noda, Shuichi, Hsiao-Chieh Lo, Shih-Chien Liu, Chia-Hsun Wu, Yuen-Yee Wong, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Samukawa, Seiji, Chang, Edward Yi
Published in IEEE electron device letters (01.01.2017)
Published in IEEE electron device letters (01.01.2017)
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Journal Article
Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires
Chong, Su Kong, Goh, Boon Tong, Wong, Yuen-Yee, Nguyen, Hong-Quan, Do, Hien, Ahmad, Ishaq, Aspanut, Zarina, Muhamad, Muhamad Rasat, Dee, Chang Fu, Rahman, Saadah Abdul
Published in Journal of luminescence (01.06.2012)
Published in Journal of luminescence (01.06.2012)
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Journal Article
Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors
Wong, Yuen-Yee, Chang, Edward Yi, Huang, Wei-Ching, Lin, Yueh-Chin, Tu, Yung-Yi, Chen, Kai-Wei, Yu, Hung-Wei
Published in Applied physics express (01.09.2014)
Published in Applied physics express (01.09.2014)
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Journal Article
Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors
Huang, Wei-Ching, Liu, Kuan-Shin, Wong, Yuen-Yee, Hsieh, Chi-Feng, Chang, Edward-Yi, Hsu, Heng-Tung
Published in Japanese Journal of Applied Physics (01.07.2015)
Published in Japanese Journal of Applied Physics (01.07.2015)
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Journal Article
Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAs
Trinh, Hai-Dang, Chang, Edward Yi, Wong, Yuen-Yee, Yu, Chih-Chieh, Chang, Chia-Yuan, Lin, Yueh-Chin, Nguyen, Hong-Quan, Tran, Binh-Tinh
Published in Jpn J Appl Phys (01.11.2010)
Published in Jpn J Appl Phys (01.11.2010)
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Journal Article
Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates
Wong, Yuen-Yee, Huang, Wei-Ching, Trinh, Hai-Dang, Yang, Tsung-Hsi, Chang, Jet-Rung, Chen, Micheal, Chang, Edward Yi
Published in Journal of electronic materials (01.08.2012)
Published in Journal of electronic materials (01.08.2012)
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Journal Article
Investigation of Characteristics of Al2O3/n-In x Ga1−x As (x = 0.53, 0.7, and 1) Metal–Oxide–Semiconductor Structures
Trinh, Hai-Dang, Lin, Yueh-Chin, Kuo, Chien-I, Chang, Edward Yi, Nguyen, Hong-Quan, Wong, Yuen-Yee, Yu, Chih-Chieh, Chen, Chi-Ming, Chang, Chia-Yuan, Wu, Jyun-Yi, Chiu, Han-Chin, Yu, Terrence, Chang, Hui-Cheng, Tsai, Joseph, Hwang, David
Published in Journal of electronic materials (01.08.2013)
Published in Journal of electronic materials (01.08.2013)
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Journal Article
The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy
Wong, Yuen-Yee, Chang, Edward Yi, Yang, Tsung-Hsi, Chang, Jet-Rung, Chen, Yi-Cheng, Ku, Jui-Tai, Lee, Ching-Ting, Chang, Chun-Wei
Published in Journal of crystal growth (01.03.2009)
Published in Journal of crystal growth (01.03.2009)
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Journal Article
Low resistive InGaN film grown by metalorganic chemical vapor deposition
Shrestha, Niraj Man, Chauhan, Prerna, Wong, Yuen-Yee, Li, Yiming, Samukawa, Seiji, Chang, Edward Yi
Published in Vacuum (01.01.2020)
Published in Vacuum (01.01.2020)
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Journal Article
Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs
Lin, Y. C., Shie, Sheng-Li, Shie, Tin-En, Wong, Yuen-Yee, Chen, K. S., Chang, E. Y.
Published in Journal of electronic materials (01.03.2011)
Published in Journal of electronic materials (01.03.2011)
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Journal Article
Epitaxial Overgrowth of Gallium Nitride Nano-Rods on Silicon (111) Substrates by RF-Plasma-Assisted Molecular Beam Epitaxy
Ku, Jui-Tai, Yang, Tsung-Hsi, Chang, Jet-Rung, Wong, Yuen-Yee, Chou, Wu-Ching, Chang, Chun-Yen, Chen, Chiang-Yao
Published in Japanese Journal of Applied Physics (01.04.2010)
Published in Japanese Journal of Applied Physics (01.04.2010)
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Journal Article
Atypical presentation of lymphangioleiomyomatosis as acute abdomen: CT diagnosis
Wong, Yuen-Yee, Yeung, Tai-Kong, Chu, Winnie Chiu-Wing
Published in American journal of roentgenology (1976) (01.07.2003)
Published in American journal of roentgenology (1976) (01.07.2003)
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Journal Article
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
Quang Ho Luc, Chang, Edward Yi, Hai Dang Trinh, Yueh Chin Lin, Hong Quan Nguyen, Yuen Yee Wong, Huy Binh Do, Salahuddin, Sayeef, Hu, Chenming Calvin
Published in IEEE transactions on electron devices (01.08.2014)
Published in IEEE transactions on electron devices (01.08.2014)
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Journal Article
Near infrared absorptions of CH4/He plasma: the Phillips band system of C2
Chan, Man-Chor, Yeung, Shun-Hin, Wong, Yuen-Yee, Li, Yongfang, Chan, Wang-Ming, Yim, Kan-Hing
Published in Chemical physics letters (01.06.2004)
Published in Chemical physics letters (01.06.2004)
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Journal Article
Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures
Huang, Wei-Ching, Chu, Chung-Ming, Wong, Yuen-Yee, Chen, Kai-Wei, Lin, Yen-Ku, Wu, Chia-Hsun, Lee, Wei-I, Chang, Edward-Yi
Published in Materials science in semiconductor processing (01.04.2016)
Published in Materials science in semiconductor processing (01.04.2016)
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