Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
Ting-En Hsieh, Chang, Edward Yi, Yi-Zuo Song, Yueh-Chin Lin, Huan-Chung Wang, Shin-Chien Liu, Salahuddin, Sayeef, Hu, Chenming Calvin
Published in IEEE electron device letters (01.07.2014)
Published in IEEE electron device letters (01.07.2014)
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Journal Article
High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
Chia-Hsun Wu, Ping-Cheng Han, Shih-Chien Liu, Ting-En Hsieh, Lumbantoruan, Franky Juanda, Yu-Hsuan Ho, Jian-You Chen, Kun-Sheng Yang, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Quang Ho Luc, Yueh-Chin Lin, Chang, Edward Yi
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Journal Article
RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface
Luong, Tien Tung, Lumbantoruan, Franky, Chen, Yen‐Yu, Ho, Yen‐Teng, Weng, You‐Chen, Lin, Yueh‐Chin, Chang, Shane, Chang, Edward‐Yi
Published in Physica status solidi. A, Applications and materials science (01.07.2017)
Published in Physica status solidi. A, Applications and materials science (01.07.2017)
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Journal Article
GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications
Shih-Chien Liu, Bo-Yuan Chen, Yueh-Chin Lin, Ting-En Hsieh, Huan-Chung Wang, Chang, Edward Yi
Published in IEEE electron device letters (01.10.2014)
Published in IEEE electron device letters (01.10.2014)
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Journal Article
Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications
Lee, Ming-Wen, Lin, Yueh-Chin, Lai, Kuan-Hsien, Weng, You-Chen, Hsu, Heng-Tung, Chang, Edward Yi
Published in Physica status solidi. A, Applications and materials science (01.04.2023)
Published in Physica status solidi. A, Applications and materials science (01.04.2023)
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Journal Article
Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications
Lee, Ming-Wen, Chuang, Cheng-Wei, Gamiz, Francisco, Chang, Edward-Yi, Lin, Yueh-Chin
Published in Micromachines (Basel) (01.01.2024)
Published in Micromachines (Basel) (01.01.2024)
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Journal Article
Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications
Wang, Chun, Chen, Yu-Chiao, Hsu, Heng-Tung, Tsao, Yi-Fan, Lin, Yueh-Chin, Dee, Chang-Fu, Chang, Edward-Yi
Published in Materials (01.11.2021)
Published in Materials (01.11.2021)
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Journal Article
Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications
Lee, Ming-Wen, Lin, Yueh-Chin, Hsu, Heng-Tung, Gamiz, Francisco, Chang, Edward-Yi
Published in Micromachines (Basel) (25.04.2023)
Published in Micromachines (Basel) (25.04.2023)
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Journal Article
A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer
Weng, You-Chen, Lin, Yueh-Chin, Hsu, Heng-Tung, Kao, Min-Lu, Huang, Hsuan-Yao, Ueda, Daisuke, Ha, Minh-Thien-Huu, Yang, Chih-Yi, Maa, Jer-Shen, Chang, Edward-Yi, Dee, Chang-Fu
Published in Materials (18.01.2022)
Published in Materials (18.01.2022)
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Journal Article
Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications
Tseng, Howie, Lin, Yueh-Chin, Cheng, Chieh, Chen, Po-Wei, Hsu, Heng-Tung, Tsao, Yi-Fan, Chang, Edward Yi
Published in IEEE journal of the Electron Devices Society (2024)
Published in IEEE journal of the Electron Devices Society (2024)
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Journal Article
Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application
Lee, Ping-Hsun, Lin, Yueh-Chin, Hsu, Heng-Tung, Yu, Cheng-Hsien, Tsao, Yi-Fan, Su, Pin, Chang, Edward Yi
Published in IEEE journal of the Electron Devices Society (2023)
Published in IEEE journal of the Electron Devices Society (2023)
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Journal Article
Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications
Lee, Ming-Wen, Lin, Yueh-Chin, Chang, Po-Sheng, Tsao, Yi-Fan, Hsu, Heng-Tung, Dee, Chang-Fu, Chang, Edward Yi
Published in IEEE journal of the Electron Devices Society (2023)
Published in IEEE journal of the Electron Devices Society (2023)
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Journal Article
Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment
Po-Chun Chang, Quang-Ho Luc, Yueh-Chin Lin, Shih-Chien Liu, Yen-Ku Lin, Sze, Simon M., Chang, Edward Yi
Published in IEEE transactions on electron devices (01.09.2016)
Published in IEEE transactions on electron devices (01.09.2016)
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Journal Article
Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation
Wu, Chia-Hsun, Han, Ping-Cheng, Luc, Quang Ho, Hsu, Ching-Yi, Hsieh, Ting-En, Wang, Huan-Chung, Lin, Yen-Ku, Chang, Po-Chun, Lin, Yueh-Chin, Chang, Edward Yi
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article
Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications
Huang, Kuan Ning, Lin, Yueh-Chin, Lin, Jia-Ching, Hsu, Chia Chieh, Lee, Jin Hwa, Wu, Chia-Hsun, Yao, Jing Neng, Hsu, Heng-Tung, Nagarajan, Venkatesan, Kakushima, Kuniyuki, Tsutsui, Kazuo, Iwai, Hiroshi, Chien, Chao Hsin, Chang, Edward Yi
Published in Journal of electronic materials (01.02.2020)
Published in Journal of electronic materials (01.02.2020)
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Journal Article
InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment
Po-Chun Chang, Quang-Ho Luc, Yueh-Chin Lin, Yen-Ku Lin, Chia-Hsun Wu, Sze, Simon M., Chang, Edward Yi
Published in IEEE electron device letters (01.03.2017)
Published in IEEE electron device letters (01.03.2017)
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Journal Article
AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
Wang, Huan-Chung, Hsieh, Ting-En, Lin, Yueh-Chin, Luc, Quang Ho, Liu, Shih-Chien, Wu, Chia-Hsun, Dee, Chang Fu, Majlis, Burhanuddin Yeop, Chang, Edward Yi
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article