Overall performance improvement in GaAs MSM photodetectors by using recessed-cathode structure
Yuang, Rong-Heng, Shieh, Jia-Lin, Chyi, Jen-Inn, Chen, Jyh-Shin
Published in IEEE photonics technology letters (01.02.1997)
Published in IEEE photonics technology letters (01.02.1997)
Get full text
Journal Article
Reduction of hole transit time in GaAs MSM photodetectors by p-type delta-doping
Chyi, Jen-Inn, Chien, Yi-Jiunn, Yuang, Rong-Heng, Shieh, Jia-Lin, Pan, Jen-Wei, Chen, Jyh-Shin
Published in IEEE photonics technology letters (01.11.1996)
Published in IEEE photonics technology letters (01.11.1996)
Get full text
Journal Article
The effects of AlGaAs cap layers on the dc and speed performance of GaAs metal-semiconductor-metal photodetectors
Rong-Heng Yuang, Jia-Lin Shieh, Ray-Ming Lin, Hung-Chang-Shieh, Jen-Inn Chyi
Published in International Electron Devices and Materials Symposium (1994)
Published in International Electron Devices and Materials Symposium (1994)
Get full text
Conference Proceeding
High-responsivity InGaAs MSM photodetectors with semi-transparent Schottky contacts
Rong-Hen Yuang, Jen-Inn Chyi, Yi-Jen Chan, Wei Lin, Yuan-Kuang Tu
Published in IEEE photonics technology letters (01.11.1995)
Published in IEEE photonics technology letters (01.11.1995)
Get full text
Journal Article
Reduction of hole transit time in GaAs MSM photodetectors by p-type /spl delta/-doping
Jen-Inn Chyi, Yi-Jiunn Chien, Rong-Heng Yuang, Jia-Lin Shieh, Jen-Wei Pan, Jyh-Shin Chen
Published in IEEE photonics technology letters (01.11.1996)
Published in IEEE photonics technology letters (01.11.1996)
Get full text
Journal Article