Search Results - "Yozo Tokumaru, Yozo Tokumaru" :: K.UTB vyhledávací portál

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Temperature dependence of electron-beam-induced current image of semi-insulating undoped liquid-encapsulated Czochralski GaAs

by TOKUMARU, Y
Published in Japanese Journal of Applied Physics (01.11.1991)

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Photoluminescence Analysis of {311} Interstitial Defects in Wafers Synthesized by Separation by Implanted Oxygen

by Jun-ichi Takiguchi, Jun-ichi Takiguchi, Michio Tajima, Michio Tajima, Atsushi Ogura, Atsushi Ogura, Shigeo Ibuka, Shigeo Ibuka, Yozo Tokumaru, Yozo Tokumaru
Published in Japanese Journal of Applied Physics (01.06.2001)

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Temperature Dependence of Photocurrent and Band Gap of Cl-Doped Semi-Insulating CdTe with Evaporated Au Electrodes

by Yamanaka, Sadanori, Tsushima, Shugo, Shimizu, Hidetoshi, Tokumaru, Yozo
Published in Japanese Journal of Applied Physics (2002)

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Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level Parameters

by Okushi, Hideyo, Tokumaru, Yozo
Published in Japanese Journal of Applied Physics (01.01.1980)

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Scanning Isothermal Current Transient Spectroscopy (SICTS) and Its Application to the Microscopic Distribution Measurement of Gap States in Hydrogenated Amorphous Silicon Films

by TOKUMARU, Y, OKUSHI, H, NAKA, H
Published in Japanese Journal of Applied Physics (01.06.1989)

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SEM-EBIC Investigations of Semi-Insulating Undoped LEC-GaAs

by TOKUMARU, Y, OKADA, Y
Published in Japanese Journal of Applied Physics (01.01.1985)

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Properties of Silicon Doped with Nickel

by Tokumaru, Yozo
Published in Japanese Journal of Applied Physics (01.09.1963)

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A Modulated DLTS Method for Large Signal Analysis (C 2 -DLTS)

by Okushi, Hideyo, Tokumaru, Yozo
Published in Japanese Journal of Applied Physics (01.01.1981)

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Isothermal Capacitance Transient Spectroscopy

by Okushi, Hideyo, Tokumaru, Yozo
Published in Japanese Journal of Applied Physics (01.01.1981)

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Deep Levels in n-Type Undoped and Te-doped InSb Crystals

by Tokumaru, Yozo, Okushi, Hideyo, Fujisada, Hiroyuki
Published in Japanese Journal of Applied Physics (01.03.1987)

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Electron-beam-induced charge collection microscopy of undoped LEC GaAs

by TOKYMARU, Y, OKADA, Y
Published in Japanese Journal of Applied Physics (01.01.1984)

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Scanning optical fiber microscope for high resolution laser beam induced current image observation of semiconductor defects

by OGURA, M, SAKAUE, K, TOKUMARU, Y
Published in Japanese Journal of Applied Physics (01.08.1985)

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Low-Frequency Photocurrent Oscillations and Trapping Levels in High-Resistivity GaAs Doped with Oxygen

by Tokumaru, Yozo
Published in Japanese Journal of Applied Physics (01.01.1970)

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Current Oscillations and High-Field Domains in Photoexcited High-Resistivity GaAs

by Tokumaru, Yozo
Published in Japanese Journal of Applied Physics (01.01.1969)

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Deep Levels Associated with Nitrogen in Silicon

by Tokumaru, Yozo, Okushi, Hideyo, Masui, Tsumoru, Abe, Takao
Published in Japanese Journal of Applied Physics (01.01.1982)

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Phase Memory Effect in Photocurrent Oscillation Due to Trap-Controlled Domain Propagation

by Tokumaru, Yozo, Mikoshiba, Nobuo
Published in Japanese Journal of Applied Physics (01.01.1974)

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Characteristic Operations of High-Resistivity GaAs Oscillators

by Tokumaru, Yozo, Mikoshiba, Nobuo
Published in Japanese Journal of Applied Physics (01.01.1972)

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DLTS Measurement on Au-Doped Si p + n Junctions and Its Computer Simulation

by Tokumaru, Yozo, Okushi, Hideyo
Published in Japanese Journal of Applied Physics (01.01.1980)

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Determination of the Density of State Distribution of a-Si:H by Isothermal Capacitance Transient Spectroscopy

by Okushi, Hideyo, Tokumaru, Yozo, Yamasaki, Satoshi, Oheda, Hidetoshi, Tanaka, Kazunobu
Published in Japanese Journal of Applied Physics (01.01.1981)

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Phase Shift Spectroscopy of Modulated Photocurrent: Its Application to Gold Levels in Crystalline Si

by Oheda, Hidetoshi, Okushi, Hideyo, Tokumaru, Yozo, Tanaka, Kazunobu
Published in Japanese Journal of Applied Physics (01.01.1981)

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