Effects of Annealing Temperature on TiN/Hf0.5Zr0.5O2/TiN Ferroelectric Capacitor Prepared by In-Situ Like Consecutive Atomic Layer Deposition
Liang, Yan-Kui, Huang, Yi-Shuo, Peng, Li-Chi, Yang, Tsung-Ying, Young, Bo-Feng, Lu, Chun-Chieh, Yeong, Sai Hooi, Lin, Yu-Ming, Su, Chun-Jung, Chang, Edward-Yi, Lin, Chun-Hsiung
Published in IEEE transactions on nanotechnology (2022)
Published in IEEE transactions on nanotechnology (2022)
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Journal Article
Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes
Liang, Yan-Kui, Lin, Jing-Wei, Huang, Yi-Shuo, Lin, Wei-Cheng, Young, Bo-Feng, Shih, Yu-Chuan, Lu, Chun-Chieh, Yeong, Sai Hooi, Lin, Yu-Ming, Liu, Po-Tsun, Chang, Edward Yi, Lin, Chun-Hsiung
Published in ECS journal of solid state science and technology (01.05.2022)
Published in ECS journal of solid state science and technology (01.05.2022)
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Journal Article
Effects of Annealing Temperature on TiN/Hf 0.5 Zr 0.5 O 2 /TiN Ferroelectric Capacitor Prepared by In-Situ Like Consecutive Atomic Layer Deposition
Liang, Yan-Kui, Huang, Yi-Shuo, Peng, Li-Chi, Yang, Tsung-Ying, Young, Bo-Feng, Lu, Chun-Chieh, Yeong, Sai Hooi, Lin, Yu-Ming, Su, Chun-Jung, Chang, Edward-Yi, Lin, Chun-Hsiung
Published in IEEE transactions on nanotechnology (2022)
Published in IEEE transactions on nanotechnology (2022)
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Journal Article
Memory array and methods of forming same
Lin, Yu-Ming, Young, Bo-Feng, Chia, Han-Jong, Yeong, Sai-Hooi, Chui, Chi On
Year of Publication 20.08.2024
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Year of Publication 20.08.2024
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