Microdefects in an As-Grown Czochralski Silicon Crystal Studied by Synchrotron Radiation Section Topography with Aid of Computer Simulation
Satoshi Iida, Satoshi Iida, Yoshirou Aoki, Yoshirou Aoki, Kouhei Okitsu, Kouhei Okitsu, Yoshimitsu Sugita, Yoshimitsu Sugita, Hiroshi Kawata, Hiroshi Kawata, Takao Abe, Takao Abe
Published in Japanese Journal of Applied Physics (01.01.1998)
Published in Japanese Journal of Applied Physics (01.01.1998)
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Journal Article
Numerically Simulated and Experimentally Obtained X-Ray Section Topographs of a Spherical Strain Field in a Floating Zone Silicon Crystal
Okitsu, Kouhei, Iida, Satoshi, Sugita, Yoshimitsu, Takeno, Hiroshi, Kawata, Yasuyoshi Yagou
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE (01.12.1992)
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE (01.12.1992)
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X-ray characterization of tungsten single crystals grown by secondary recrystallization method
Katoh, Masahiro, Iida, Satoshi, Sugita, Yoshimitsu, Okamoto, Ken-ichi
Published in Journal of crystal growth (01.06.1991)
Published in Journal of crystal growth (01.06.1991)
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Journal Article
Effect of Carbon and Oxygen Precipitation on Gold Diffusion in Silicon
Itoh, Yoshiko, Sugita, Yoshimitsu, Nozaki, Tadashi
Published in Japanese Journal of Applied Physics (01.10.1989)
Published in Japanese Journal of Applied Physics (01.10.1989)
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Measurement and analysis of the static Debye-Waller factor of Cz-silicon with small oxygen precipitates
IIDA, S, SUGIYAMA, H, SUGITA, Y, KAWATA, H
Published in Japanese Journal of Applied Physics (01.06.1988)
Published in Japanese Journal of Applied Physics (01.06.1988)
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Measurement of the static Debye-Waller factor of silicon crystals by the pendellösung fringe method
SUGITA, Y, SUGIYAMA, H, IIDA, S, KAWATA, H
Published in Japanese Journal of Applied Physics (01.11.1987)
Published in Japanese Journal of Applied Physics (01.11.1987)
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Measurement of the out-diffusion profile of oxygen in silicon
SUGITA, Y, KAWATA, H, NAKAMICHI, S, OKABE, T, WATANABE, T, YOSHIKAWA, S, ITOH, Y, NOZAKI, T
Published in Japanese Journal of Applied Physics (01.01.1985)
Published in Japanese Journal of Applied Physics (01.01.1985)
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Formation of a Stacking Fault-Free Region in Thermally Oxidized Silicon
Shimizu, Hirofumi, Yoshinaka, Akira, Sugita, Yoshimitsu
Published in Japanese Journal of Applied Physics (01.01.1978)
Published in Japanese Journal of Applied Physics (01.01.1978)
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Influence of Doping Impurities on Stacking Fault Generation in Thermally Oxidized Silicon
Kato, Teruo, Sugita, Yoshimitsu, Yoshinaka, Akira
Published in Japanese Journal of Applied Physics (01.01.1972)
Published in Japanese Journal of Applied Physics (01.01.1972)
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Journal Article
Vapor Etching of Germanium by Germanium Tetraiodide
Iida, Shinya, Sugita, Yoshimitsu, Nomura, Masayoshi
Published in Japanese Journal of Applied Physics (01.01.1964)
Published in Japanese Journal of Applied Physics (01.01.1964)
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A New Technique of X-Ray Diffraction Microscopy of Scanning Type
Kishino, Seigô, Sugita, Yoshimitsu, Kohra, Kazutake
Published in Japanese Journal of Applied Physics (01.01.1967)
Published in Japanese Journal of Applied Physics (01.01.1967)
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