A 31 ns Random Cycle VCAT-Based 4F ^ DRAM With Manufacturability and Enhanced Cell Efficiency
Song, Ki-Whan, Kim, Jin-Young, Yoon, Jae-Man, Kim, Sua, Kim, Huijung, Chung, Hyun-Woo, Kim, Hyungi, Kim, Kanguk, Park, Hwan-Wook, Kang, Hyun Chul, Tak, Nam-Kyun, Park, Dukha, Kim, Woo-Seop, Lee, Yeong-Taek, Oh, Yong Chul, Jin, Gyo-Young, Yoo, Jeihwan, Park, Donggun, Oh, Kyungseok, Kim, Changhyun, Jun, Young-Hyun
Published in IEEE journal of solid-state circuits (01.04.2010)
Published in IEEE journal of solid-state circuits (01.04.2010)
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Journal Article
A formal approach to lock escalation
Chang, Ji-Woong, Whang, Kyu-Young, Lee, Young-Koo, Yang, Jae-Heon, Oh, Yong-Chul
Published in Information systems (Oxford) (01.04.2005)
Published in Information systems (Oxford) (01.04.2005)
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Journal Article
55 nm capacitor-less 1T DRAM cell transistor with non-overlap structure
Ki-Whan Song, Hoon Jeong, Jae-Wook Lee, Sung In Hong, Nam-Kyun Tak, Young-Tae Kim, Yong Lack Choi, Han Sung Joo, Sung Hwan Kim, Ho Ju Song, Yong Chul Oh, Woo-Seop Kim, Yeong-Taek Lee, Kyungseok Oh, Changhyun Kim
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
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Conference Proceeding
A 31 ns Random Cycle VCAT-Based 4F 2 DRAM With Manufacturability and Enhanced Cell Efficiency
Song, Ki-Whan, Kim, Jin-Young, Yoon, Jae-Man, Kim, Sua, Kim, Huijung, Chung, Hyun-Woo, Kim, Hyungi, Kim, Kanguk, Park, Hwan-Wook, Kang, Hyun Chul, Tak, Nam-Kyun, Park, Dukha, Kim, Woo-Seop, Lee, Yeong-Taek, Oh, Yong Chul, Jin, Gyo-Young, Yoo, Jeihwan, Park, Donggun, Oh, Kyungseok, Kim, Changhyun, Jun, Young-Hyun
Published in IEEE journal of solid-state circuits (01.04.2010)
Published in IEEE journal of solid-state circuits (01.04.2010)
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Journal Article
Novel 4F2 DRAM cell with Vertical Pillar Transistor(VPT)
Hyunwoo Chung, Huijung Kim, Hyungi Kim, Kanguk Kim, Sua Kim, Ki-Whan Song, Jiyoung Kim, Yong Chul Oh, Yoosang Hwang, Hyeongsun Hong, Gyo-Young Jin, Chilhee Chung
Published in 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2011)
Published in 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2011)
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Conference Proceeding
A 31 ns Random Cycle VCAT-Based 4F2 DRAM With Manufacturability and Enhanced Cell Efficiency
SONG, Ki-Whan, KIM, Jin-Young, TAK, Nam-Kyun, PARK, Dukha, KIM, Woo-Seop, LEE, Yeong-Taek, YONG CHUL OH, JIN, Gyo-Young, YOO, Jeihwan, PARK, Donggun, OH, Kyungseok, KIM, Changhyun, YOON, Jae-Man, JUN, Young-Hyun, KIM, Sua, KIM, Huijung, CHUNG, Hyun-Woo, KIM, Hyungi, KIM, Kanguk, PARK, Hwan-Wook, HYUN CHUL KANG
Published in IEEE journal of solid-state circuits (2010)
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Published in IEEE journal of solid-state circuits (2010)
Conference Proceeding
Halbleitervorrichtung mit vergrabenen Wortleitungen
Kim, Hui-jung, Kim, Kang-uk, Chung, Hyun-woo, Oh, Yong-chul, Kim, Hyun-gi
Year of Publication 02.12.2021
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Year of Publication 02.12.2021
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