30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology
Higuchi, Tsutomu, Kodama, Takuyo, Kato, Koji, Fukuda, Ryo, Tokiwa, Naoya, Abe, Mitsuhiro, Takagiwa, Teruo, Shimizu, Yuki, Musha, Junji, Sakurai, Katsuaki, Sato, Jumpei, Utsumi, Tetsuaki, Yoneya, Kazuhide, Suematsu, Yasuhiro, Hashimoto, Toshifumi, Hioka, Takeshi, Yanagidaira, Kosuke, Kojima, Masatsugu, Matsuno, Junya, Shiraishi, Kei, Yamamoto, Kensuke, Hayashi, Shintaro, Hashiguchi, Tomoharu, Inuzuka, Kazuko, Sugahara, Akio, Honma, Mitsuaki, Tsunoda, Keiji, Yamamoto, Kazumasa, Sugimoto, Takahiro, Fujimura, Tomofumi, Kaneko, Mizuki, Date, Hiroki, Kobayashi, Osamu, Minamoto, Takatoshi, Tachibana, Ryoichi, Yamaguchi, Itaru, Lee, Juan, Ramachandra, Venky, Rajendra, Srinivas, Tang, Tianyu, Darne, Siddhesh, Lee, Jiwang, Li, Jason, Miwa, Toru, Yamashita, Ryuji, Sugawara, Hiroshi, Ookuma, Naoki, Kano, Masahiro, Mizukoshi, Hiroyuki, Kuniyoshi, Yuki, Watanabe, Mitsuyuki, Akiyama, Kei, Mori, Hirotoshi, Arimizu, Akira, Katano, Yoshito, Ehama, Masakazu, Maejima, Hiroshi, Hosono, Koji, Yoshihara, Masahiro
Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13.02.2021)
Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13.02.2021)
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Conference Proceeding
11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology
Yamashita, Ryuji, Magia, Sagar, Higuchi, Tsutomu, Yoneya, Kazuhide, Yamamura, Toshio, Mizukoshi, Hiroyuki, Zaitsu, Shingo, Yamashita, Minoru, Toyama, Shunichi, Kamae, Norihiro, Lee, Juan, Shuo Chen, Jiawei Tao, Mak, William, Xiaohua Zhang, Ying Yu, Utsunomiya, Yuko, Kato, Yosuke, Sakai, Manabu, Matsumoto, Masahide, Chibvongodze, Hardwell, Ookuma, Naoki, Yabe, Hiroki, Taigor, Subodh, Samineni, Rangarao, Kodama, Takuyo, Kamata, Yoshihiko, Namai, Yuzuru, Huynh, Jonathan, Sung-En Wang, Yankang He, Trung Pham, Saraf, Vivek, Petkar, Akshay, Watanabe, Mitsuyuki, Hayashi, Koichiro, Swarnkar, Prashant, Miwa, Hitoshi, Pradhan, Aditya, Dey, Sulagna, Dwibedy, Debasish, Xavier, Thushara, Balaga, Muralikrishna, Agarwal, Samiksha, Kulkarni, Swaroop, Papasaheb, Zameer, Deora, Sahil, Hong, Patrick, Meiling Wei, Balakrishnan, Gopinath, Ariki, Takuya, Verma, Kapil, Chang Siau, Yingda Dong, Ching-Huang Lu, Miwa, Toru, Moogat, Farookh
Published in 2017 IEEE International Solid-State Circuits Conference (ISSCC) (01.02.2017)
Published in 2017 IEEE International Solid-State Circuits Conference (ISSCC) (01.02.2017)
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A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology
Kanda, Kazushige, Koyanagi, Masaru, Yamamura, Toshio, Hosono, Koji, Yoshihara, Masahiro, Miwa, Toru, Kato, Yosuke, Mak, Alex, Chan, Siu Lung, Tsai, Frank, Cernea, Raul, Le, Binh, Makino, Eiichi, Taira, Takashi, Otake, Hiroyuki, Kajimura, Norifumi, Fujimura, Susumu, Takeuchi, Yoshiaki, Itoh, Mikihiko, Shirakawa, Masanobu, Nakamura, Dai, Suzuki, Yuya, Okukawa, Yuki, Kojima, Masatsugu, Yoneya, Kazuhide, Arizono, Takamichi, Hisada, Toshiki, Miyamoto, Shinji, Noguchi, Mitsuhiro, Yaegashi, Toshitake, Higashitani, Masaaki, Ito, Fumitoshi, Kamei, Teruhiko, Hemink, Gertjan, Maruyama, Tooru, Ino, Kazumi, Ohshima, Shigeo
Published in 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers (01.02.2008)
Published in 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers (01.02.2008)
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