Development of UV light-emitting diodes based AlGaN/GaN heterojunction utilizing thermal oxidation annealing
Li, Qiuen, Kang, Xuanwu, Wu, Hao, Zheng, Yingkui, Liu, Xinyu, Huang, Chengjun
Published in AIP advances (01.10.2024)
Published in AIP advances (01.10.2024)
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Journal Article
Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices
Huang, Sen, Liu, Xinyu, Wang, Xinhua, Kang, Xuanwu, Zhang, Jinhan, Fan, Jie, Shi, Jingyuan, Wei, Ke, Zheng, Yingkui, Gao, Hongwei, Sun, Qian, Wang, Maojun, Shen, Bo, Chen, Kevin J.
Published in IEEE transactions on electron devices (01.01.2018)
Published in IEEE transactions on electron devices (01.01.2018)
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Journal Article
High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure
Sen Huang, Xinyu Liu, Xinhua Wang, Xuanwu Kang, Jinhan Zhang, Qilong Bao, Ke Wei, Yingkui Zheng, Chao Zhao, Hongwei Gao, Qian Sun, Zhaofu Zhang, Chen, Kevin J.
Published in IEEE electron device letters (01.12.2016)
Published in IEEE electron device letters (01.12.2016)
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Journal Article
Ultralow-Contact-Resistance Au-Free Ohmic Contacts With Low Annealing Temperature on AlGaN/GaN Heterostructures
Zhang, Jinhan, Kang, Xuanwu, Wang, Xinhua, Huang, Sen, Chen, Chen, Wei, Ke, Zheng, Yingkui, Zhou, Qi, Chen, Wanjun, Zhang, Bo, Liu, Xinyu
Published in IEEE electron device letters (01.06.2018)
Published in IEEE electron device letters (01.06.2018)
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Journal Article
Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer
Wang, Xinhua, Huang, Sen, Zheng, Yingkui, Wei, Ke, Chen, Xiaojuan, Liu, Guoguo, Yuan, Tingting, Luo, Weijun, Pang, Lei, Jiang, Haojie, Li, Junfeng, Zhao, Chao, Zhang, Haoxiang, Liu, Xinyu
Published in IEEE electron device letters (01.07.2015)
Published in IEEE electron device letters (01.07.2015)
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Journal Article
High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique
Sen Huang, Xinyu Liu, Jinhan Zhang, Ke Wei, Guoguo Liu, Xinhua Wang, Yingkui Zheng, Honggang Liu, Zhi Jin, Chao Zhao, Cheng Liu, Shenghou Liu, Shu Yang, Jincheng Zhang, Yue Hao, Chen, Kevin J.
Published in IEEE electron device letters (01.08.2015)
Published in IEEE electron device letters (01.08.2015)
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Journal Article
Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics
Sun, Yue, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Li, Pengfei, Wang, Wenbo, Liu, Xinyu, Zhang, Guoqi
Published in Nanomaterials (Basel, Switzerland) (01.04.2020)
Published in Nanomaterials (Basel, Switzerland) (01.04.2020)
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Journal Article
Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis
Wu, Hao, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Zhang, Lin, Liu, Xinyu, Zhang, Guoqi
Published in Journal of semiconductors (01.06.2022)
Published in Journal of semiconductors (01.06.2022)
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Journal Article
High- fMAX High Johnson's Figure-of-Merit 0.2-μm Gate AlGaN/GaN HEMTs on Silicon Substrate With AlN/SiNx Passivation
SEN HUANG, KE WEI, QIMENG JIANG, CHEN, Kevin J, GUOGUO LIU, YINGKUI ZHENG, XINHUA WANG, LEI PANG, XIN KONG, XINYU LIU, ZHIKAI TANG, SHU YANG
Published in IEEE electron device letters (2014)
Published in IEEE electron device letters (2014)
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Journal Article
Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
Zhang, Haitao, Kang, Xuanwu, Zheng, Yingkui, Wu, Hao, Wei, Ke, Liu, Xinyu, Ye, Tianchun, Jin, Zhi
Published in Micromachines (Basel) (22.10.2021)
Published in Micromachines (Basel) (22.10.2021)
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Journal Article
Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode
Zhang, Haitao, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Wu, Hao, Liu, Xinyu, Ye, Tianchun, Jin, Zhi
Published in Micromachines (Basel) (09.05.2022)
Published in Micromachines (Basel) (09.05.2022)
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Journal Article
High- f} High Johnson's Figure-of-Merit 0.2- \mu Gate AlGaN/GaN HEMTs on Silicon Substrate With /} Passivation
Sen Huang, Ke Wei, Guoguo Liu, Yingkui Zheng, Xinhua Wang, Lei Pang, Xin Kong, Xinyu Liu, Zhikai Tang, Shu Yang, Qimeng Jiang, Chen, Kevin J.
Published in IEEE electron device letters (01.03.2014)
Published in IEEE electron device letters (01.03.2014)
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Journal Article
A C-band GaN based linear power amplifier with 55.7% PAE
Luo, Weijun, Chen, Xiaojuan, Zhang, Hui, Liu, Guoguo, Zheng, Yingkui, Liu, Xinyu
Published in Solid-state electronics (01.04.2010)
Published in Solid-state electronics (01.04.2010)
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Journal Article
ON-state breakdown mechanism of GaN power HEMTs
Jinhan Zhang, Sen Huang, Qi Zhou, Xinhua Wang, Ke Wei, Guoguo Liu, Yingkui Zheng, Xiaojuan Chen, Xinyu Liu, Zhongjie Yu, Wanjun Chen, Bo Zhang
Published in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2014)
Published in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2014)
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Conference Proceeding
X-band AlGaN/GaN HEMTs with high microwave power performance
Peng, MingZeng, Zheng, YingKui, Wei, Ke, Chen, XiaoJuan, Liu, XinYu
Published in Science China. Physics, mechanics & astronomy (01.03.2011)
Published in Science China. Physics, mechanics & astronomy (01.03.2011)
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Journal Article
Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs
Tingting, Yuan, Xinyu, Liu, Yingkui, Zheng, Chengzhan, Li, Ke, Wei, Guoguo, Liu
Published in Journal of semiconductors (01.12.2009)
Published in Journal of semiconductors (01.12.2009)
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Journal Article