A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate
Liu, Bo (波刘), Feng, Zhihong (志红冯), Zhang, Sen (森张), Dun, Shaobo (少博敦), Yin, Jiayun (甲运尹), Li, Jia (佳李), Wang, Jingjing (晶晶王), Zhang, Xiaowei (效帏张), Fang, Yulong (玉龙房), Cai, Shujun (树军蔡)
Published in Journal of semiconductors (01.12.2011)
Published in Journal of semiconductors (01.12.2011)
Get full text
Journal Article