Modeling the Well-Edge Proximity Effect in Highly Scaled MOSFETs
Yi-Ming Sheu, Ke-Wei Su, Tian, S., Sheng-Jier Yang, Chih-Chiang Wang, Ming-Jer Chen, Liu, S.
Published in IEEE transactions on electron devices (01.11.2006)
Published in IEEE transactions on electron devices (01.11.2006)
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Journal Article
Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs
Yi-Ming Sheu, Sheng-Jier Yang, Chih-Chiang Wang, Chih-Sheng Chang, Li-Ping Huang, Tsung-Yi Huang, Ming-Jer Chen, Diaz, C.H.
Published in IEEE transactions on electron devices (01.01.2005)
Published in IEEE transactions on electron devices (01.01.2005)
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Journal Article
A Novel Approach to Link Process Parameters to BSIM Model Parameters
Mande, S., Chandorkar, A.N., Cheng Hsaio, Kasa Huang, Yi-Ming Sheu, Liu, S.
Published in IEEE transactions on semiconductor manufacturing (01.11.2009)
Published in IEEE transactions on semiconductor manufacturing (01.11.2009)
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Journal Article
Mobility Modeling and Its Extraction Technique for Manufacturing Strained-Si MOSFETs
Jhong-Sheng Wang, Po-Nien Chen, W., Chun-Hsing Shih, Chenhsin Lien, Pin Su, Yi-Ming Sheu, Yuan-Shun Chao, D., Goto, K.-I.
Published in IEEE electron device letters (01.11.2007)
Published in IEEE electron device letters (01.11.2007)
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Journal Article
A Millisecond-Anneal-Assisted Selective Fully Silicided (FUSI) Gate Process
Da-Wen Lin, Wang, M., Ming-Lung Cheng, Yi-Ming Sheu, Tarng, B., Che-Min Chu, Chun-Wen Nieh, Chia-Ping Lo, Wen-Chi Tsai, Lin, R., Shyh-Wei Wang, Kuan-Lun Cheng, Chii-Ming Wu, Ming-Ta Lei, Chung-Cheng Wu, Diaz, C.H., Ming-Jer Chen
Published in IEEE electron device letters (01.09.2008)
Published in IEEE electron device letters (01.09.2008)
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Journal Article
Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs
Yi-Ming Sheu, Yi-Ming Sheu, Sheng-Jier Yang, Sheng-Jier Yang, Chih-Chiang Wang, Chih-Chiang Wang, Chih-Sheng Chang, Chih-Sheng Chang, Li-Ping Huang, Li-Ping Huang, Tsung-Yi Huang, Tsung-Yi Huang, Ming-Jer Chen, Ming-Jer Chen, Diaz, C.H
Published in IEEE transactions on electron devices (01.01.2005)
Published in IEEE transactions on electron devices (01.01.2005)
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Journal Article
Reproducing Subthreshold Characteristics of Metal–Oxide–Semiconductor Field Effect Transistors under Shallow Trench Isolation Mechanical Stress Using a Stress-Dependent Diffusion Model
Sheu, Yi-Ming, Yang, Sheng-Jier, Wang, Chih-Chiang, Chang, Chih-Sheng, Chen, Ming-Jer, Liu, Sally, Diaz, Carlos H.
Published in Japanese Journal of Applied Physics (01.08.2006)
Published in Japanese Journal of Applied Physics (01.08.2006)
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Journal Article
Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs
Yi-Ming Sheu, Yang, Sheng-Jier, Chih-Chiang, Wang, Chih-Sheng, Chang, Li-Ping, Huang, Tsung-Yi Huang, Chen, Ming-Jer, Diaz, C H
Published in IEEE transactions on electron devices (01.01.2005)
Published in IEEE transactions on electron devices (01.01.2005)
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Journal Article
Modeling Dopant Diffusion in Strained and Strain-Relaxed Epi-SiGe
Yi-Ming Sheu, Tsung-Yi Huang, Yu-Ping. Hu, Chih-Chiang Wang, Liu, S., Duffy, R., Heringa, A., Roozeboom, F., Cowern, N.E.B., Griffin, P.B.
Published in 2005 International Conference On Simulation of Semiconductor Processes and Devices (2005)
Published in 2005 International Conference On Simulation of Semiconductor Processes and Devices (2005)
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Conference Proceeding
An atomic level study of multiple co-implantation technology for 32nm and beyond pMOSFETs ultra-shallow junction
Yun-Ju Sun, Ya-Yun Cheng, Yin-Pin Wang, Yamamoto, Tomonari, Chun-Fu Cheng, Shao-Hwang Sia, Yu-Chia Chang, Yueh-You Chen, Ching-Wei Tsai, Yi-Ming Sheu, Wang, Howard C.-H
Published in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications (01.04.2011)
Published in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications (01.04.2011)
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Conference Proceeding
Narrow Width and Length Dependence of SiGe and Sallow-Trench-Isolation Stress Induced Defects in 45 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Strained SiGe Source/Drain
Cheng, Chung-Yun, Fang, Yean-Kuen, Hsieh, Jang-Cheng, Sheu, Yi-Ming, Hsia, Harry, Chen, Wei-Ming, Lin, Shyue-Shyh, Hou, Chin-Shan
Published in Japanese Journal of Applied Physics (01.04.2009)
Published in Japanese Journal of Applied Physics (01.04.2009)
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Journal Article
Method of fabricating a multi-gate device
Wu, Zhiqiang, Wu, Chung-Cheng, Sheu, Yi-Ming, Leung, Ying-Keung, Wei, Huan-Sheng, Chiang, Hung-Li, Liu, Chia-Wen
Year of Publication 09.04.2024
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Year of Publication 09.04.2024
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