Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications
Ruize Sun, Liang, Yung C., Yee-Chia Yeo, Cezhou Zhao
Published in IEEE transactions on electron devices (01.08.2017)
Published in IEEE transactions on electron devices (01.08.2017)
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Journal Article
Ballistic Transport Performance of Silicane and Germanane Transistors
Low, Kain Lu, Huang, Wen, Yeo, Yee-Chia, Liang, Gengchiau
Published in IEEE transactions on electron devices (01.05.2014)
Published in IEEE transactions on electron devices (01.05.2014)
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Journal Article
Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions
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Journal Article
Conference Proceeding
High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
Wang, Wei, Lei, Dian, Huang, Yi-Chiau, Lee, Kwang Hong, Loke, Wan-Khai, Dong, Yuan, Xu, Shengqiang, Tan, Chuan Seng, Wang, Hong, Yoon, Soon-Fatt, Gong, Xiao, Yeo, Yee-Chia
Published in Optics express (16.04.2018)
Published in Optics express (16.04.2018)
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Journal Article
New materials for post-Si computing: Ge and GeSn devices
Gupta, Suyog, Gong, Xiao, Zhang, Rui, Yeo, Yee-Chia, Takagi, Shinichi, Saraswat, Krishna C.
Published in MRS bulletin (01.08.2014)
Published in MRS bulletin (01.08.2014)
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Journal Article
Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1−xSnx layer on Ge(001) substrate
Wang, Wei, Li, Lingzi, Zhou, Qian, Pan, Jisheng, Zhang, Zheng, Tok, Eng Soon, Yeo, Yee-Chia
Published in Applied surface science (01.12.2014)
Published in Applied surface science (01.12.2014)
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Journal Article
Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate
Lei, Dian, Lee, Kwang Hong, Huang, Yi-Chiau, Wang, Wei, Masudy-Panah, Saeid, Yadav, Sachin, Kumar, Annie, Dong, Yuan, Kang, Yuye, Xu, Shengqiang, Wu, Ying, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
Published in IEEE transactions on electron devices (01.09.2018)
Published in IEEE transactions on electron devices (01.09.2018)
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Journal Article
Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge1−xSnx) Fin Structure
Wang, Wei, Lei, Dian, Dong, Yuan, Gong, Xiao, Tok, Eng Soon, Yeo, Yee-Chia
Published in Scientific reports (12.05.2017)
Published in Scientific reports (12.05.2017)
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Journal Article
Design and Experimental Demonstration of Integrated Over-Current Protection Circuit for GaN DC-DC Converters
Sun, Ruize, Liang, Yung C., Yeo, Yee-Chia, Zhao, Cezhou, Chen, Wanjun, Zhang, Bo
Published in IEEE journal of emerging and selected topics in power electronics (01.12.2020)
Published in IEEE journal of emerging and selected topics in power electronics (01.12.2020)
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Journal Article
n-MOSFET With Silicon-Carbon Source/Drain for Enhancement of Carrier Transport
King-Jien Chui, Kah-Wee Ang, Balasubramanian, N., Ming-Fu Li, Samudra, G.S., Yee-Chia Yeo
Published in IEEE transactions on electron devices (01.02.2007)
Published in IEEE transactions on electron devices (01.02.2007)
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Journal Article
Toward Conformal Damage-Free Doping With Abrupt Ultrashallow Junction: Formation of Si Monolayers and Laser Anneal as a Novel Doping Technique for InGaAs nMOSFETs
Kong, Eugene Y-J, Pengfei Guo, Xiao Gong, Bin Liu, Yee-Chia Yeo
Published in IEEE transactions on electron devices (01.04.2014)
Published in IEEE transactions on electron devices (01.04.2014)
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Journal Article
Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET With Tapered Source/Drain Structure
Kian-Hui Goh, Yadav, Sachin, Kain Lu Low, Gengchiau Liang, Xiao Gong, Yee-Chia Yeo
Published in IEEE transactions on electron devices (01.03.2016)
Published in IEEE transactions on electron devices (01.03.2016)
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Journal Article