Editorial Special Issue on "Memory Devices and Technologies for the Next Decade"
Compagnoni, Christian Monzio, Kang, Jinfeng, Shih, Yen-Hao, Du, Pei-Ying Penny, Kim, Tae-Hun, Mouli, Chandra, Yang, Joshua, Roy, Kaushik
Published in IEEE transactions on electron devices (01.04.2020)
Published in IEEE transactions on electron devices (01.04.2020)
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Journal Article
Modeling the Impact of Random Grain Boundary Traps on the Electrical Behavior of Vertical Gate 3-D NAND Flash Memory Devices
Hsiao, Yi-Hsuan, Lue, Hang-Ting, Chen, Wei-Chen, Chang, Kuo-Pin, Shih, Yen-Hao, Tsui, Bing-Yue, Hsieh, Kuang-Yeu, Lu, Chih-Yuan
Published in IEEE transactions on electron devices (01.06.2014)
Published in IEEE transactions on electron devices (01.06.2014)
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Journal Article
Layer-Aware Program-and-Read Schemes for 3D Stackable Vertical-Gate BE-SONOS NAND Flash Against Cross-Layer Process Variations
Hung, Chun-Hsiung, Chang, Meng-Fan, Yang, Yih-Shan, Kuo, Yao-Jen, Lai, Tzu-Neng, Shen, Shin-Jang, Hsu, Jo-Yu, Hung, Shuo-Nan, Lue, Hang-Ting, Shih, Yen-Hao, Huang, Shih-Lin, Chen, Ti-Wen, Chen, Tzung Shen, Chen, Chung Kuang, Hung, Chi-Yu, Lu, Chih-Yuan
Published in IEEE journal of solid-state circuits (01.06.2015)
Published in IEEE journal of solid-state circuits (01.06.2015)
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Journal Article
Z-Interference and Z-Disturbance in Vertical Gate-Type 3-D NAND
Yeh, Teng-Hao Elton, Wei-Chen Chen, Hsu, Tzu-Hsuan Bruce, Du, Pei-Ying Penny, Chih-Chang Hsieh, Hang-Ting Lue, Yen-Hao Shih, Ya-Chin King, Chih-Yuan Lu
Published in IEEE transactions on electron devices (01.03.2016)
Published in IEEE transactions on electron devices (01.03.2016)
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Journal Article
A New String Decoding Scheme for Enhancing Array Block Efficiency of Vertical Gate Type (VG-Type) 3-D NAND
Yeh, Teng-Hao, Wu, Chen-Jun, Hu, Chih-Wei, Chen, Wei-Chen, Lue, Hang-Ting, Shih, Yen-Hao, King, Ya-Chin, Lu, Chih-Yuan
Published in IEEE electron device letters (01.04.2015)
Published in IEEE electron device letters (01.04.2015)
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Journal Article
Modeling and Characterization of Hydrogen-Induced Charge Loss in Nitride-Trapping Memory
YANG, Yi-Lin, CHANG, Chia-Hua, SHIH, Yen-Hao, HSIEH, Kuang-Yeu, HWU, Jenn-Gwo
Published in IEEE transactions on electron devices (01.06.2007)
Published in IEEE transactions on electron devices (01.06.2007)
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Journal Article
Dynamic Resistance-A Metric for Variability Characterization of Phase-Change Memory
Rajendran, B., Breitwisch, M., Ming-Hsiu Lee, Burr, G.W., Yen-Hao Shih, Cheek, R., Schrott, A., Chieh-Fang Chen, Joseph, E., Dasaka, R., Lung, H.-L., Chung Lam
Published in IEEE electron device letters (01.02.2009)
Published in IEEE electron device letters (01.02.2009)
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Journal Article
A transient analysis method to characterize the trap vertical location in nitride-trapping devices
Hang-Ting Lue, Yen-Hao Shih, Kuang-Yeu Hsieh, Liu, R., Chih-Yuan Lu
Published in IEEE electron device letters (01.12.2004)
Published in IEEE electron device letters (01.12.2004)
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Journal Article
Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs
Lai, Erh-Kun, Chien, Wei-Chih, Chen, Yi-Chou, Hong, Tian-Jue, Lin, Yu-Yu, Chang, Kuo-Pin, Yao, Yeong-Der, Lin, Pang, Horng, Sheng-Fu, Gong, Jeng, Tsai, Shih-Chang, Lee, Ching-Hsiung, Hsieh, Sheng-Hui, Chen, Chun-Fu, Shih, Yen-Hao, Hsieh, Kuang-Yeu, Liu, Rich, Lu, Chih-Yuan
Published in Japanese Journal of Applied Physics (01.04.2010)
Published in Japanese Journal of Applied Physics (01.04.2010)
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Journal Article
Phase change materials and their application to random access memory technology
Raoux, Simone, Shelby, Robert M., Jordan-Sweet, Jean, Munoz, Becky, Salinga, Martin, Chen, Yi-Chou, Shih, Yen-Hao, Lai, Erh-Kun, Lee, Ming-Hsiu
Published in Microelectronic engineering (01.12.2008)
Published in Microelectronic engineering (01.12.2008)
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Journal Article
Conference Proceeding
Study of localized tunnel oxide degradation after hot carrier stressing using a novel mid-bandgap voltage characterization method
Cheng-Hung Tsai, Yen-Hao Shih, Yi-Hsuan Hsiao, Tzu-Hsuan Hsu, Kuang Yeu Hsieh, Liu, R., Chih-Yuan Lu
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
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Conference Proceeding
Study of Charge Loss Mechanism of SONOS-Type Devices using Hot-Hole Erase and Methods to Improve the Charge Retention
Hang-Ting Lue, Yi-Hsuan Hsiao, Yen-Hao Shih, Erh-Kun Lai, Kuang-Yeu Hsieh, Rich Liu, Chih-Yuan Lu
Published in 2006 IEEE International Reliability Physics Symposium Proceedings (01.01.2006)
Published in 2006 IEEE International Reliability Physics Symposium Proceedings (01.01.2006)
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Conference Proceeding
Radically extending the cycling endurance of Flash memory (to > 100M Cycles) by using built-in thermal annealing to self-heal the stress-induced damage
Hang-Ting Lue, Pei-Ying Du, Chih-Ping Chen, Wei-Chen Chen, Chih-Chang Hsieh, Yi-Hsuan Hsiao, Yen-Hao Shih, Chih-Yuan Lu
Published in 2012 International Electron Devices Meeting (01.12.2012)
Published in 2012 International Electron Devices Meeting (01.12.2012)
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Conference Proceeding
A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current
Chien, Wei-Chih, Chen, Yi-Chou, Lee, Feng-Ming, Lin, Yu-Yu, Lai, Erh-Kun, Yao, Yeong-Der, Gong, Jeng, Horng, Sheng-Fu, Yeh, Chiao-Wen, Tsai, Shih-Chang, Lee, Ching-Hsiung, Huang, Yu-Kai, Chen, Chun-Fu, Kao, Hsiao-Feng, Shih, Yen-Hao, Hsieh, Kuang-Yeu, Lu, Chih-Yuan
Published in Jpn J Appl Phys (01.04.2011)
Published in Jpn J Appl Phys (01.04.2011)
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Journal Article
Study of the impact of charge-neutrality level (CNL) of grain boundary interface trap on device variability and P/E cycling endurance of 3D NAND flash memory
Wei-Chen Chen, Hang-Ting Lue, Yi-Hsuan Hsiao, Xi-Wei Lin, Huang, Jacky, Yen-Hao Shih, Chih-Yuan Lu
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
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Conference Proceeding