Electrical Properties of Low-Temperature-Compatible P-Channel Polycrystalline-Silicon TFTs Using High-[Formula Omitted] Gate Dielectrics
Yang, Ming-Jui, Chien, Chao-Hsin, Lu, Yi-Hsien, Shen, Chih-Yen, Huang, Tiao-Yuan
Published in IEEE transactions on electron devices (01.04.2008)
Published in IEEE transactions on electron devices (01.04.2008)
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Journal Article
Electrical Properties of Low-Temperature-Compatible P-Channel Polycrystalline-Silicon TFTs Using High- \kappa Gate Dielectrics
YANG, Ming-Jui, CHIEN, Chao-Hsin, LU, Yi-Hsien, SHEN, Chih-Yen, HUANG, Tiao-Yuan
Published in IEEE transactions on electron devices (01.04.2008)
Published in IEEE transactions on electron devices (01.04.2008)
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Journal Article
Synthesis of a CNT-grafted TiO2 nanocatalyst and its activity triggered by a DC voltage
Kuo, Chien-Sheng, Tseng, Yao-Hsuan, Lin, Hong-Ying, Huang, Chia-Hung, Shen, Chih-Yen, Li, Yuan-Yao, Ismat Shah, S, Huang, Chin-Pao
Published in Nanotechnology (21.11.2007)
Published in Nanotechnology (21.11.2007)
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Journal Article
A high-driving class-AB buffer amplifier with a new pseudo source follower
Chih-Wen Lu, Yen-Chih Shen, Meng-Lieh Sheu
Published in 2007 IFIP International Conference on Very Large Scale Integration (01.10.2007)
Published in 2007 IFIP International Conference on Very Large Scale Integration (01.10.2007)
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Conference Proceeding
Synthesis of a CNT-grafted TiO(2) nanocatalyst and its activity triggered by a DC voltage
Kuo, Chien-Sheng, Tseng, Yao-Hsuan, Lin, Hong-Ying, Huang, Chia-Hung, Shen, Chih-Yen, Li, Yuan-Yao, Ismat Shah, S, Huang, Chin-Pao
Published in Nanotechnology (21.11.2007)
Published in Nanotechnology (21.11.2007)
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Journal Article
Synthesis of a CNT-grafted TiO 2 nanocatalyst and its activity triggered by a DC voltage
Kuo, Chien-Sheng, Tseng, Yao-Hsuan, Lin, Hong-Ying, Huang, Chia-Hung, Shen, Chih-Yen, Li, Yuan-Yao, Ismat Shah, S, Huang, Chin-Pao
Published in Nanotechnology (21.11.2007)
Published in Nanotechnology (21.11.2007)
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Journal Article
16nm functional 0.039µm2 6T-SRAM cell with nano injection lithography, nanowire channel, and full TiN gate
Hou-Yu Chen, Chun-Chi Chen, Fu-Kuo Hsueh, Jan-Tsai Liu, Chih-Yen Shen, Chiung-Chih Hsu, Shyi-Long Shy, Bih-Tiao Lin, Hsi-Ta Chuang, Cheng-San Wu, Chenming Hu, Chien-Chao Huang, Fu-Liang Yang
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
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Conference Proceeding
A study of barrier engineered Al2O3 and HfO2 high-K charge trapping devices (BE-MAONOS and BE-MHONOS) with optimal high-K thickness
Sheng-Chih Lai, Chih-Ping Chen, Pei-Ying Du, Hang-Ting Lue, Dawei Heh, Chih-Yen Shen, Hsueh, F K, Wu, H Y, Jeng-Hwa Liao, Jung-Yu Hsieh, Wu, M T, Hsu, F H, Hong, S P, Yeh, C T, Yung-Tai Hung, Kuang-Yeu Hsieh, Chih-Yuan Lu
Published in 2010 IEEE International Memory Workshop (01.05.2010)
Published in 2010 IEEE International Memory Workshop (01.05.2010)
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Conference Proceeding
An Oxide-Buffered BE-MANOS Charge-Trapping Device and the Role of Al2O3
Sheng-Chih Lai, Hang-Ting Lue, Chien-Wei Liao, Yu-Fong Huang, Ming-Jui Yang, Yi-Hsien Lue, Tai-Bor Wu, Jung-Yu Hsieh, Szu-Yu Wang, Shih-Ping Hong, Fang-Hao Hsu, Chili-Yen Shen, Guang-Li Luo, Chao-Hsin Chien, Kuang-Yeu Hsieh, Liu, R., Chili-Yuan Lu
Published in 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design (01.05.2008)
Published in 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design (01.05.2008)
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Conference Proceeding