Slight gate oxide thickness increase in PMOS devices with BF2 implanted polysilicon gate
Jiunn-Yann Tsai, Ying Shi, Prasad, S., Yeh, S.W.-C., Rakkhit, R.
Published in IEEE electron device letters (01.09.1998)
Published in IEEE electron device letters (01.09.1998)
Get full text
Journal Article
Slight gate oxide thickness increase in PMOS devices with BF 2 implanted polysilicon gate
Jiunn-Yann Tsai, Ying Shi, Prasad, S., Yeh, S.W.-C., Rakkhit, R.
Published in IEEE electron device letters (01.09.1998)
Published in IEEE electron device letters (01.09.1998)
Get full text
Journal Article