Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications
Hinkle, C.L., Vogel, E.M., Ye, P.D., Wallace, R.M.
Published in Current opinion in solid state & materials science (01.10.2011)
Published in Current opinion in solid state & materials science (01.10.2011)
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Journal Article
Ferroelectric and Anti-Ferroelectric Hafnium Zirconium Oxide: Scaling Limit, Switching Speed and Record High Polarization Density
Lyu, X., Si, M., Sun, X., Capano, M. A., Wang, H., Ye, P.D.
Published in 2019 Symposium on VLSI Technology (01.06.2019)
Published in 2019 Symposium on VLSI Technology (01.06.2019)
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Conference Proceeding
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
Ye, P.D., Wilk, G.D., Kwo, J., Yang, B., Gossmann, H.-J.L., Frei, M., Chu, S.N.G., Mannaerts, J.P., Sergent, M., Hong, M., Ng, K.K., Bude, J.
Published in IEEE electron device letters (01.04.2003)
Published in IEEE electron device letters (01.04.2003)
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Journal Article
Current-transport properties of atomic-layer-deposited ultrathin Al2O3 on GaAs
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Conference Proceeding
Journal Article
Improvement of GaAs metal–semiconductor field-effect transistor drain–source breakdown voltage by oxide surface passivation grown by atomic layer deposition
Ye, P.D., Wilk, G.D., Yang, B., Chu, S.N.G., Ng, K.K., Bude, J.
Published in Solid-state electronics (01.05.2005)
Published in Solid-state electronics (01.05.2005)
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Journal Article
Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric
YANG, B, YE, P. D, KWO, J, FREI, M. R, GOSSMANN, H.-J. L, MANNAERTS, J. P, SERGENT, M, HONG, M, NG, K, BUDE, J
Published in Journal of crystal growth (01.04.2003)
Published in Journal of crystal growth (01.04.2003)
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Conference Proceeding
Journal Article
Submicrometer inversion-type enhancement-mode ingaas MOSFET with Atomic-Layer-Deposited Al2O3 as gate dielectric
XUAN, Y, WU, Y. Q, LIN, H. C, SHEN, T, YE, Peide D
Published in IEEE electron device letters (01.11.2007)
Published in IEEE electron device letters (01.11.2007)
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Journal Article
Chemically exfoliating large sheets of phosphorene via choline chloride urea viscosity-tuning
Ng, A, Sutto, T E, Matis, B R, Deng, Y, Ye, P D, Stroud, R M, Brintlinger, T H, Bassim, N D
Published in Nanotechnology (18.04.2017)
Published in Nanotechnology (18.04.2017)
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Journal Article
Characterization of Parylene-N as Flexible Substrate and Passivation Layer for Microwave and Millimeter-Wave Integrated Circuits
Sharifi, H., Lahiji, R.R., Han-Chung Lin, Ye, P.D., Katehi, L.P.B., Mohammadi, S.
Published in IEEE transactions on advanced packaging (01.02.2009)
Published in IEEE transactions on advanced packaging (01.02.2009)
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Journal Article
0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode [Formula Omitted] MOSFET
Wu, Y.Q, Wang, W.K, Koybasi, O, Zakharov, D.N, Stach, E.A, Nakahara, S, Hwang, J, Ye, P.D
Published in IEEE electron device letters (01.07.2009)
Published in IEEE electron device letters (01.07.2009)
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Journal Article
Fermi-level unpinning on GaAs (111)A surface with direct ALD Al2O3
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Conference Proceeding