Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study
Savchenko, D.V., Yatsyk, D.M., Genkin, O.M., Nosachov, Yu.F., Drozdenko, O.V., Moiseenko, V.I., Kalabukhova, E.N.
Published in Semiconductor physics, quantum electronics, and optoelectronics (01.01.2023)
Published in Semiconductor physics, quantum electronics, and optoelectronics (01.01.2023)
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