Few-layer HfS2 transistors
Kanazawa, Toru, Amemiya, Tomohiro, Ishikawa, Atsushi, Upadhyaya, Vikrant, Tsuruta, Kenji, Tanaka, Takuo, Miyamoto, Yasuyuki
Published in Scientific reports (01.03.2016)
Published in Scientific reports (01.03.2016)
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Journal Article
High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers
Kotani, Junji, Makiyama, Kozo, Ohki, Toshihiro, Ozaki, Shiro, Okamoto, Naoya, Minoura, Yuichi, Sato, Masaru, Nakamura, Norikazu, Miyamoto, Yasuyuki
Published in Electronics letters (01.02.2023)
Published in Electronics letters (01.02.2023)
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Journal Article
Regrown source/drain in InGaAs multi-gate MOSFETs
Miyamoto, Yasuyuki, Kanazawa, Toru, Kise, Nobukazu, Kinoshita, Haruki, Ohsawa, Kazuto
Published in Journal of crystal growth (15.09.2019)
Published in Journal of crystal growth (15.09.2019)
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Journal Article
InGaAs/AlAs triple-barrier p-i-n junction diode for realizing superlattice-based FET for steep slope
Yukimachi, Atsushi, Miyamoto, Yasuyuki
Published in Japanese Journal of Applied Physics (01.11.2016)
Published in Japanese Journal of Applied Physics (01.11.2016)
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Journal Article
Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor
Zhang, Wenlun, Netsu, Seiko, Kanazawa, Toru, Amemiya, Tomohiro, Miyamoto, Yasuyuki
Published in Japanese Journal of Applied Physics (15.01.2019)
Published in Japanese Journal of Applied Physics (15.01.2019)
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Journal Article
Effects of hypoxia and glucose-removal condition on muscle contraction of the smooth muscles of porcine urinary bladder
NAGAI, Yuta, KANEDA, Takeharu, MIYAMOTO, Yasuyuki, NURUKI, Takaomi, KANDA, Hidenori, URAKAWA, Norimoto, SHIMIZU, Kazumasa
Published in Journal of Veterinary Medical Science (01.01.2016)
Published in Journal of Veterinary Medical Science (01.01.2016)
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Journal Article
Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique
Yamanaka, Ryota, Kanazawa, Toru, Yagyu, Eiji, Miyamoto, Yasuyuki
Published in Japanese Journal of Applied Physics (01.06.2015)
Published in Japanese Journal of Applied Physics (01.06.2015)
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Journal Article
Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration
Lin, Wenbo, Iwata, Shinjiro, Fukuda, Koichi, Miyamoto, Yasuyuki
Published in Japanese Journal of Applied Physics (01.07.2016)
Published in Japanese Journal of Applied Physics (01.07.2016)
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Journal Article
Mechanism Study of Gate Leakage Current for AlGaN/GaN High Electron Mobility Transistor Structure Under High Reverse Bias by Thin Surface Barrier Model and Technology Computer Aided Design Simulation
Hayashi, Kazuo, Yamaguchi, Yutaro, Oishi, Toshiyuki, Otsuka, Hiroshi, Yamanaka, Koji, Nakayama, Masatoshi, Miyamoto, Yasuyuki
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Journal Article
A revision of the genus Nemapogon Schrank (Lepidoptera, Tineidae) including a stored grain pest, N. granella, from Japan
Osada, Yohei, Miyamoto, Yasuyuki, Sakai, Makoto, Yoshimatsu, Shin-ichi, Huang, Guo-Hua, Hirowatari, Toshiya
Published in Applied entomology and zoology (01.08.2015)
Published in Applied entomology and zoology (01.08.2015)
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Journal Article
High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal--Insulator--Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa
Kashiwano, Masashi, Hirai, Jun, Ikeda, Shunsuke, Fujimatsu, Motohiko, Miyamoto, Yasuyuki
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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