Search Results - "Yasutake, Kiyoshi" :: K.UTB vyhledávací portál

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Gas-phase kinetics in atmospheric-pressure plasma-enhanced chemical vapor deposition of silicon films

by Kakiuchi, Hiroaki, Ohmi, Hiromasa, Yasutake, Kiyoshi
Published in Journal of applied physics (07.08.2021)

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Improvement of deposition characteristics of silicon oxide layers using argon-based atmospheric-pressure very high-frequency plasma

by Kakiuchi, Hiroaki, Ohmi, Hiromasa, Takeda, Seiya, Yasutake, Kiyoshi
Published in Journal of applied physics (14.09.2022)

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Plasma parameters in very high frequency argon plasmas mixed with nitrogen at atmospheric pressure

by Yasutake, Kiyoshi, Yoshida, Kazushi, Ohmi, Hiromasa, Kakiuchi, Hiroaki
Published in Journal of applied physics (07.05.2021)

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Pulsed very high-frequency plasma-enhanced chemical vapor deposition of silicon films for low-temperature (120 °C) thin film transistors

by Kakiuchi, Hiroaki, Ohmi, Hiromasa, Yasutake, Kiyoshi
Published in Journal of physics. D, Applied physics (07.10.2020)

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Plasma parameters in very high frequency helium and argon plasmas at atmospheric pressure

by Yoshida, Kazushi, Nitta, Ken, Ohmi, Hiromasa, Yasutake, Kiyoshi, Kakiuchi, Hiroaki
Published in Journal of applied physics (07.10.2020)

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Formation of indium nitride nanostructures by atmospheric pressure plasma nitridation of molten indium

by Yoshida, Kazushi, Ohmi, Hiromasa, Yasutake, Kiyoshi, Kakiuchi, Hiroaki
Published in Journal of applied physics (14.08.2021)

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Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma

by Kakiuchi, Hiroaki, Ohmi, Hiromasa, Yasutake, Kiyoshi
Published in Journal of physics. D, Applied physics (06.08.2018)

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Determination of plasma impedance of microwave plasma system by electric field simulation

by Shuto, Mitsutoshi, Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yamada, Takahiro, Yasutake, Kiyoshi
Published in Journal of applied physics (28.07.2017)

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Study on silicon removal property and surface smoothing phenomenon by moderate-pressure microwave hydrogen plasma

by Ohmi, Hiromasa, Kimoto, Kenta, Nomura, Toshimitsu, Kakiuchi, Hiroaki, Yasutake, Kiyoshi
Published in Materials science in semiconductor processing (01.07.2021)

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Hydrogen atom density in narrow-gap microwave hydrogen plasma determined by calorimetry

by Yamada, Takahiro, Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yasutake, Kiyoshi
Published in Journal of applied physics (14.02.2016)

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Efficiency of silane gas generation in high-rate silicon etching by narrow-gap microwave hydrogen plasma

by Ohmi, Hiromasa, Funaki, Takeshi, Kakiuchi, Hiroaki, Yasutake, Kiyoshi
Published in Journal of physics. D, Applied physics (09.12.2015)

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Diffusion of excessively adsorbed hydrogen atoms on hydrogen terminated Si(100)(2×1) surface

by Inagaki, Kouji, Morikawa, Yoshitada, Ohmi, Hiromasa, Yasutake, Kiyoshi, Kakiuchi, Hiroaki
Published in AIP advances (01.08.2021)

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Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma

by Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yasutake, Kiyoshi
Published in Journal of applied physics (28.07.2015)

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Silicon film formation by chemical transport in atmospheric-pressure pure hydrogen plasma

by Ohmi, Hiromasa, Kakiuchi, Hiroaki, Hamaoka, Yoshinori, Yasutake, Kiyoshi
Published in Journal of applied physics (15.07.2007)

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Significant Improvement of Copper Dry Etching Property of a High-Pressure Hydrogen-Based Plasma by Nitrogen Gas Addition

by Ohmi, Hiromasa, Sato, Jumpei, Shirasu, Yoshiki, Hirano, Tatsuya, Kakiuchi, Hiroaki, Yasutake, Kiyoshi
Published in ACS omega (28.02.2019)

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Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation

by Zhuo, Zeteng, Sannomiya, Yuta, Kanetani, Yuki, Yamada, Takahiro, Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yasutake, Kiyoshi
Published in Nanoscale research letters (01.05.2013)

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Impacts of noble gas dilution on Si film structure prepared by atmospheric-pressure plasma enhanced chemical transport

by Ohmi, Hiromasa, Kishimoto, Kazuya, Kakiuchi, Hiroaki, Yasutake, Kiyoshi
Published in Journal of physics. D, Applied physics (07.10.2008)

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Effects of Surface Temperature on High-Rate Etching of Silicon by Narrow-Gap Microwave Hydrogen Plasma

by Yamada, Takahiro, Ohmi, Hiromasa, Okamoto, Kohei, Kakiuchi, Hiroaki, Yasutake, Kiyoshi
Published in Japanese Journal of Applied Physics (01.10.2012)

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Effect of H2 Flow Rate on High-Rate Etching of Si by Narrow-Gap Microwave Hydrogen Plasma

by Yamada, Takahiro, Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yasutake, Kiyoshi
Published in Plasma chemistry and plasma processing (01.08.2013)

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Low-temperature synthesis of microcrystalline 3C-SiC film by high-pressure hydrogen-plasma-enhanced chemical transport

by Ohmi, Hiromasa, Hori, Takahiro, Mori, Tetsuya, Kakiuchi, Hiroaki, Yasutake, Kiyoshi
Published in Journal of physics. D, Applied physics (15.06.2011)

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