Influence of Iridium Sputtering Conditions on the Magnetic Properties of Co/Pt-Based Iridium-Synthetic Antiferromagnetic Coupling Reference Layer
Honjo, H., Naganuma, H., Nishioka, K., Nguyen, T. V. A., Yasuhira, M., Ikeda, S., Endoh, T.
Published in IEEE transactions on magnetics (01.08.2022)
Published in IEEE transactions on magnetics (01.08.2022)
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Journal Article
Novel Quad-Interface MTJ Technology and its First Demonstration With High Thermal Stability Factor and Switching Efficiency for STT-MRAM Beyond 2X nm
Nishioka, K., Sato, H., Endoh, T., Honjo, H., Ikeda, S., Watanabe, T., Miura, S., Inoue, H., Tanigawa, T., Noguchi, Y., Yasuhira, M.
Published in IEEE transactions on electron devices (01.03.2020)
Published in IEEE transactions on electron devices (01.03.2020)
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Journal Article
First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM
Nishioka, K., Miura, S., Honjo, H., Inoue, H., Watanabe, T., Nasuno, T., Naganuma, H., Nguyen, T. V. A., Noguchi, Y., Yasuhira, M., Ikeda, S., Endoh, T.
Published in IEEE transactions on electron devices (01.06.2021)
Published in IEEE transactions on electron devices (01.06.2021)
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Journal Article
Perpendicular Magnetic Tunnel Junctions With Four Anti-Ferromagnetically Coupled Co/Pt Pinning Layers
Honjo, H., Nishioka, K., Miura, S., Naganuma, H., Watanabe, T., Noguchi, Y., Nguyen, T. V. A., Yasuhira, M., Ikeda, S., Endoh, T.
Published in IEEE transactions on magnetics (01.02.2022)
Published in IEEE transactions on magnetics (01.02.2022)
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Journal Article
Effect of surface modification treatment on top-pinned MTJ with perpendicular easy axis
Honjo, H., Naganuma, H., Nguyen, T. V. A., Inoue, H., Yasuhira, M., Ikeda, S., Endoh, T.
Published in AIP advances (01.02.2021)
Published in AIP advances (01.02.2021)
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Journal Article
Influence of Hard Mask Materials on the Magnetic Properties of Perpendicular MTJs With Double CoFeB/MgO Interface
Honjo, H., Niwa, M., Nishioka, K., Nguyen, T. V. A., Naganuma, H., Endo, Y., Yasuhira, M., Ikeda, S., Endoh, T.
Published in IEEE transactions on magnetics (01.08.2020)
Published in IEEE transactions on magnetics (01.08.2020)
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Journal Article
Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer
Honjo, H., Ikeda, S., Sato, H., Nishioka, K., Watanabe, T., Miura, S., Nasuno, T., Noguchi, Y., Yasuhira, M., Tanigawa, T., Koike, H., Inoue, H., Muraguchi, M., Niwa, M., Ohno, H., Endoh, T.
Published in IEEE transactions on magnetics (01.11.2017)
Published in IEEE transactions on magnetics (01.11.2017)
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Journal Article
Improvement of Thermal Tolerance of CoFeB-MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition
Honjo, H., Ikeda, S., Sato, H., Sato, S., Watanabe, T., Miura, S., Nasuno, T., Noguchi, Y., Yasuhira, M., Tanigawa, T., Koike, H., Muraguchi, M., Niwa, M., Ito, K., Ohno, H., Endoh, T.
Published in IEEE transactions on magnetics (01.07.2016)
Published in IEEE transactions on magnetics (01.07.2016)
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Journal Article
Study of Education Program of In-Hospital Procurement Transplant Coordinators in Japan
Fukushima, N, Konaka, S, Yasuhira, M, Izawa, M
Published in Transplantation proceedings (01.07.2014)
Published in Transplantation proceedings (01.07.2014)
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Journal Article
Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer
Honjo, H., Ikeda, S., Sato, H., Watanebe, T., Miura, S., Nasuno, T., Noguchi, Y., Yasuhira, M., Tanigawa, T., Koike, H., Muraguchi, M., Niwa, M., Ito, K., Ohno, H., Endoh, T.
Published in AIP advances (01.05.2017)
Published in AIP advances (01.05.2017)
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Journal Article
First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology
Honjo, H., Nguyen, T. V. A., Watanabe, T., Nasuno, T., Zhang, C., Tanigawa, T., Miura, S., Inoue, H., Niwa, M., Yoshiduka, T., Noguchi, Y., Yasuhira, M., Tamakoshi, A., Natsui, M., Ma, Y., Koike, H., Takahashi, Y., Furuya, K., Shen, H., Fukami, S., Sato, H., Ikeda, S., Hanyu, T., Ohno, H., Endoh, T.
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
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Conference Proceeding
Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage
Natsui, M., Tamakoshi, A., Honjo, H., Watanabe, T., Nasuno, T., Zhang, C., Tanigawa, T., Inoue, H., Niwa, M., Yoshiduka, T., Noguchi, Y., Yasuhira, M., Ma, Y., Shen, H., Fukami, S., Sato, H., Ikeda, S., Ohno, H., Endoh, T., Hanyu, T.
Published in 2020 IEEE Symposium on VLSI Circuits (01.06.2020)
Published in 2020 IEEE Symposium on VLSI Circuits (01.06.2020)
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Conference Proceeding