X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO2 and Si sources
Shamin, S. N., Galakhov, V. R., Aksenova, V. I., Karpov, A. N., Shvartz, N. L., Yanovitskaya, Z. Sh, Volodin, V. A., Antonova, I. V., Ezhevskaya, T. B., Jedrzejewski, J., Savir, E., Balberg, I.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2010)
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Journal Article
SiOx layer formation during plasma sputtering of Si and SiO2 targets
Karpov, A. N., Marin, D. V., Volodin, V. A., Jedrzejewski, J., Kachurin, G. A., Savir, E., Shwartz, N. L., Yanovitskaya, Z. Sh, Balberg, I., Goldstein, Y.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2008)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2008)
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Journal Article
Edge-dimer row - The reason of three-bilayer steps and islands stability on Si(111)-7X7
Neizvestny, I G, Romanyuk, K N, Shwartz, N L, Teys, S A, Yanovitskaya, Z Sh, Zverev, A V
Published in Surface science (01.08.2006)
Published in Surface science (01.08.2006)
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Journal Article
Monte Carlo simulation of growth of nanowhiskers
Nastovjak, A. G., Neizvestny, I. G., Shwartz, I. L., Yanovitskaya, Z. Sh
Published in Semiconductors (Woodbury, N.Y.) (2010)
Published in Semiconductors (Woodbury, N.Y.) (2010)
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Journal Article
X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated Si[O.sub.2] and Si sources
Shamin, S.N, Galakhov, V.R, Aksenova, V.I, Karpov, A.N, Shvartz, N.L, Yanovitskaya, Z. Sh, Volodin, V.A, Antonova, I.V, Ezhevskaya, T.B, Jedrzejewski, J, Savir, E, Balberg, I
Published in Semiconductors (Woodbury, N.Y.) (01.04.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2010)
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Journal Article
Electrical properties and photoluminescence of SiOx layers with Si nanocrystals in relation to the SiOx composition
Antonova, I. V., Gulyaev, M. B., Yanovitskaya, Z. Sh, Volodin, V. A., Marin, D. V., Efremov, M. D., Goldstein, Y., Jedrzejewski, J.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2006)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2006)
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Journal Article
Edge-dimer row – The reason of three-bilayer steps and islands stability on Si(1 1 1)-7 × 7
Neizvestny, I.G., Romanyuk, K.N., Shwartz, N.L., Teys, S.A., Yanovitskaya, Z.Sh, Zverev, A.V.
Published in Surface science (01.08.2006)
Published in Surface science (01.08.2006)
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Journal Article
Lattice Monte Carlo model of SiOx layers
Zverev, A. V., Neizvestnyi, I. G., Shwartz, N. L., Yanovitskaya, Z. Sh
Published in Nanotechnologies in Russia (01.06.2008)
Published in Nanotechnologies in Russia (01.06.2008)
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Journal Article
3D-model of epitaxial growth on porous {111} and {100} Si surfaces
Neizvestny, I.G., Shwartz, N.L., Yanovitskaya, Z.Sh, Zverev, A.V.
Published in Computer physics communications (01.08.2002)
Published in Computer physics communications (01.08.2002)
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Journal Article
Simulation of nanochannel membrane formation
Zverev, A. V., Romanov, S. I., Titovskaya, Ya. V., Shwartz, N. L., Yanovitskaya, Z. Sh
Published in Optoelectronics, instrumentation, and data processing (01.08.2009)
Published in Optoelectronics, instrumentation, and data processing (01.08.2009)
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Journal Article
Lattice Monte Carlo model of SiO x layers
Zverev, A. V., Neizvestnyi, I. G., Shwartz, N. L., Yanovitskaya, Z. Sh
Published in Nanotechnologies in Russia (01.06.2008)
Published in Nanotechnologies in Russia (01.06.2008)
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Journal Article
Transformations of porous layers upon high-temperature annealing: Simulation
Govorukha, T. B., Zverev, A. V., Neizvestny, I. G., Shwartz, N. L., Yanovitskaya, Z. Sh
Published in Russian microelectronics (01.09.2007)
Published in Russian microelectronics (01.09.2007)
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Journal Article
SiO{sub x} layer formation during plasma sputtering of Si and SiO{sub 2} targets
Karpov, A. N., Marin, D. V., Volodin, V. A., Jedrzejewski, J., Kachurin, G. A., Savir, E., Shwartz, N. L., Yanovitskaya, Z. Sh, Balberg, I., Goldstein, Y.
Published in Semiconductors (Woodbury, N.Y.) (15.06.2008)
Published in Semiconductors (Woodbury, N.Y.) (15.06.2008)
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Journal Article
SiO x layer formation during plasma sputtering of Si and SiO2 targets
Karpov, A. N., Marin, D. V., Volodin, V. A., Jedrzejewski, J., Kachurin, G. A., Savir, E., Shwartz, N. L., Yanovitskaya, Z. Sh, Balberg, I., Goldstein, Y.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2008)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2008)
Get full text
Journal Article
Electrical properties and photoluminescence of SiO{sub x} layers with Si nanocrystals in relation to the SiO{sub x} composition
Antonova, I. V., Gulyaev, M. B., Yanovitskaya, Z. Sh, Volodin, V. A., Marin, D. V., Efremov, M. D., Goldstein, Y., Jedrzejewski, J.
Published in Semiconductors (Woodbury, N.Y.) (15.10.2006)
Published in Semiconductors (Woodbury, N.Y.) (15.10.2006)
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Journal Article
Interlayer atomic diffusion as the reason for self-assembled quantum dot formation
Brunev, D.V., Neizvestny, I.G., Shwartz, N.L., Yanovitskaya, Z.Sh
Published in Computer physics communications (01.08.2002)
Published in Computer physics communications (01.08.2002)
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Journal Article