A 0.4-V Low Noise Amplifier Using Forward Body Bias Technology for 5 GHz Application
WU, Dake, RU HUANG, WONG, Waisum, YANGYUAN WANG
Published in IEEE microwave and wireless components letters (01.07.2007)
Published in IEEE microwave and wireless components letters (01.07.2007)
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Journal Article
Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation
Runsheng Wang, Runsheng Wang, Jing Zhuge, Jing Zhuge, Ru Huang, Ru Huang, Yu Tian, Yu Tian, Han Xiao, Han Xiao, Liangliang Zhang, Liangliang Zhang, Chen Li, Chen Li, Xing Zhang, Xing Zhang, Yangyuan Wang, Yangyuan Wang
Published in IEEE transactions on electron devices (01.06.2007)
Published in IEEE transactions on electron devices (01.06.2007)
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Journal Article
An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs
Wu, Chunlei, Huang, Ru, Huang, Qianqian, Wang, Chao, Wang, Jiaxin, Wang, Yangyuan
Published in IEEE transactions on electron devices (01.08.2014)
Published in IEEE transactions on electron devices (01.08.2014)
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Journal Article
Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility
Wang, Runsheng, Liu, Hongwei, Huang, Ru, Zhuge, Jing, Zhang, Liangliang, Kim, Dong-Won, Zhang, Xing, Park, Donggun, Wang, Yangyuan
Published in IEEE transactions on electron devices (01.11.2008)
Published in IEEE transactions on electron devices (01.11.2008)
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Journal Article
A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion Region
Jin He, Chan, M., Xing Zhang, Yangyuan Wang
Published in IEEE transactions on electron devices (01.09.2006)
Published in IEEE transactions on electron devices (01.09.2006)
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Journal Article
High-Performance BOI FinFETs Based on Bulk-Silicon Substrate
Xu, Xiaoyan, Wang, Runsheng, Huang, Ru, Zhuge, Jing, Chen, Gang, Zhang, Xing, Wang, Yangyuan
Published in IEEE transactions on electron devices (01.11.2008)
Published in IEEE transactions on electron devices (01.11.2008)
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Journal Article
A novel nanoscaled device concept: quasi-SOI MOSFET to eliminate the potential weaknesses of UTB SOI MOSFET
Tian, Y., Huang, R., Zhang, X., Wang, Y.
Published in IEEE transactions on electron devices (01.04.2005)
Published in IEEE transactions on electron devices (01.04.2005)
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Journal Article
Record Low-Power Organic RRAM With Sub-20-nA Reset Current
Bai, Wenliang, Huang, Ru, Cai, Yimao, Tang, Yu, Zhang, Xing, Wang, Yangyuan
Published in IEEE electron device letters (01.02.2013)
Published in IEEE electron device letters (01.02.2013)
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Journal Article
A New Dynamic Selector Based on the Bipolar RRAM for the Crossbar Array Application
Huang, Yinglong, Huang, Ru, Pan, Yue, Zhang, Lijie, Cai, Yimao, Yang, Gengyu, Wang, Yangyuan
Published in IEEE transactions on electron devices (01.08.2012)
Published in IEEE transactions on electron devices (01.08.2012)
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Journal Article
Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization
Wang, Runsheng, Zhuge, Jing, Huang, Ru, Yu, Tao, Zou, Jibin, Kim, Dong-Won, Park, Donggun, Wang, Yangyuan
Published in IEEE transactions on electron devices (01.08.2011)
Published in IEEE transactions on electron devices (01.08.2011)
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Journal Article
High performance tunnel field-effect transistor by gate and source engineering
Huang, Ru, Huang, Qianqian, Chen, Shaowen, Wu, Chunlei, Wang, Jiaxin, An, Xia, Wang, Yangyuan
Published in Nanotechnology (19.12.2014)
Published in Nanotechnology (19.12.2014)
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Journal Article
Total Ionizing Dose (TID) Effects on TaOx-Based Resistance Change Memory
LIJIE ZHANG, RU HUANG, DEJIN GAO, PAN YUE, POREN TANG, FEI TAN, YIMAO CAI, YANGYUAN WANG
Published in IEEE transactions on electron devices (01.08.2011)
Published in IEEE transactions on electron devices (01.08.2011)
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Journal Article