Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene
Chen, Zhaolong, Liu, Zhiqiang, Wei, Tongbo, Yang, Shenyuan, Dou, Zhipeng, Wang, Yunyu, Ci, Haina, Chang, Hongliang, Qi, Yue, Yan, Jianchang, Wang, Junxi, Zhang, Yanfeng, Gao, Peng, Li, Jinmin, Liu, Zhongfan
Published in Advanced materials (Weinheim) (01.06.2019)
Published in Advanced materials (Weinheim) (01.06.2019)
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High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer
Chen, Zhaolong, Zhang, Xiang, Dou, Zhipeng, Wei, Tongbo, Liu, Zhiqiang, Qi, Yue, Ci, Haina, Wang, Yunyu, Li, Yang, Chang, Hongliang, Yan, Jianchang, Yang, Shenyuan, Zhang, Yanfeng, Wang, Junxi, Gao, Peng, Li, Jinmin, Liu, Zhongfan
Published in Advanced materials (Weinheim) (26.07.2018)
Published in Advanced materials (Weinheim) (26.07.2018)
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Journal Article
Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode
Chang, Hongliang, Liu, Zhetong, Yang, Shenyuan, Gao, Yaqi, Shan, Jingyuan, Liu, Bingyao, Sun, Jingyu, Chen, Zhaolong, Yan, Jianchang, Liu, Zhiqiang, Wang, Junxi, Gao, Peng, Li, Jinmin, Liu, Zhongfan, Wei, Tongbo
Published in Light, science & applications (07.04.2022)
Published in Light, science & applications (07.04.2022)
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Atomic mechanism of strong interactions at the graphene/sapphire interface
Dou, Zhipeng, Chen, Zhaolong, Li, Ning, Yang, Shenyuan, Yu, Zhiwei, Sun, Yuanwei, Li, Yuehui, Liu, Bingyao, Luo, Qiang, Ma, Tianbao, Liao, Lei, Liu, Zhongfan, Gao, Peng
Published in Nature communications (01.11.2019)
Published in Nature communications (01.11.2019)
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Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD
Liu, Zhiqiang, Liu, Bingyao, Ren, Fang, Yin, Yue, Zhang, Shuo, Liang, Meng, Dou, Zhipeng, Liu, Zhetong, Yang, Shenyuan, Yan, Jianchang, Wei, Tongbo, Yi, Xiaoyan, Wu, Chaoxing, Guo, Tailiang, Wang, Junxi, Zhang, Yong, Li, Jinmin, Gao, Peng
Published in Small (Weinheim an der Bergstrasse, Germany) (01.04.2022)
Published in Small (Weinheim an der Bergstrasse, Germany) (01.04.2022)
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Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode
Chang, Hongliang, Liu, Zhetong, Yang, Shenyuan, Gao, Yaqi, Shan, Jingyuan, Liu, Bingyao, Sun, Jingyu, Chen, Zhaolong, Yan, Jianchang, Liu, Zhiqiang, Wang, Junxi, Gao, Peng, Li, Jinmin, Liu, Zhongfan, Wei, Tongbo
Published in Light, science & applications (29.04.2022)
Published in Light, science & applications (29.04.2022)
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Journal Article
Quasi‐2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light‐Emitting Diodes
Chang, Hongliang, Chen, Zhaolong, Liu, Bingyao, Yang, Shenyuan, Liang, Dongdong, Dou, Zhipeng, Zhang, Yonghui, Yan, Jianchang, Liu, Zhiqiang, Zhang, Zihui, Wang, Junxi, Li, Jinmin, Liu, Zhongfan, Gao, Peng, Wei, Tongbo
Published in Advanced science (01.08.2020)
Published in Advanced science (01.08.2020)
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Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration
Liang, Dongdong, Jiang, Bei, Liu, Zhetong, Chen, Zhaolong, Gao, Yaqi, Yang, Shenyuan, He, Rui, Wang, Lulu, Ran, Junxue, Wang, Junxi, Gao, Peng, Li, Jinmin, Liu, Zhongfan, Sun, Jingyu, Wei, Tongbo
Published in Advanced science (01.05.2024)
Published in Advanced science (01.05.2024)
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Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review
Liu, Zhetong, Liu, Bingyao, Chen, Zhaolong, Yang, Shenyuan, Liu, Zhiqiang, Wei, Tongbo, Gao, Peng, Liu, Zhongfan
Published in National Science Open (01.07.2023)
Published in National Science Open (01.07.2023)
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The effect of Bi composition on the electrical properties of InP1-xBix
Wei, GuanNan, Dai, Xing, Feng, Qi, Luo, WenGang, Li, YiYang, Wang, Kai, Zhang, LiYao, Pan, WenWu, Wang, ShuMin, Yang, ShenYuan, Wang, KaiYou
Published in Science China. Physics, mechanics & astronomy (01.04.2017)
Published in Science China. Physics, mechanics & astronomy (01.04.2017)
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