New Degradation Mechanisms of Width-Dependent Hot Carrier Effect in Quarter-Micron Shallow-Trench-Isolated p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors
Chung, Steve S., Chen, Shang-Jr, Yang, Wen-Jei, Yih, Cherng-Ming, Yang, Jiuun-Jer
Published in Japanese Journal of Applied Physics (01.01.2001)
Published in Japanese Journal of Applied Physics (01.01.2001)
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Journal Article
A unified 3-D mobility model for the simulation of submicron MOS devices
JIUUN-JER YANG, SHAO-SHIUN CHUNG, S, CHIEN-HWA CHANG, GIAHN-HORNG LEE
Published in Japanese Journal of Applied Physics (01.04.1993)
Published in Japanese Journal of Applied Physics (01.04.1993)
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Journal Article
Impact of STI on the reliability of narrow-width pMOSFETs with advanced ALD N/O gate stack
Chung, S.S., Chang-Hua Yeh, Hsin-Jung Feng, Chao-Sung Lai, Jiuun-Jer Yang, Chi-Chun Chen, Ying Jin, Shih-Chang Chen, Mong-Song Liang
Published in IEEE transactions on device and materials reliability (01.03.2006)
Published in IEEE transactions on device and materials reliability (01.03.2006)
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Magazine Article
Hot Carrier Reliability Considerations For High Performance Submicron Mosfet's
Honda Huang, Jiuun-Jer Yang, Ta-Lee Yu, Konrad Young, Kuang-Yi Chiu
Published in Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications (1997)
Published in Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications (1997)
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Conference Proceeding