Highly scalable ballistic injection AND-type (BiAND) flash memory
Meng-Yi Wu, Sheng-Huei Dai, Shu-Fen Hu, Yang, E.C.-S., Hsu, C.C.-H., Ya-Chin King
Published in IEEE transactions on electron devices (01.01.2006)
Published in IEEE transactions on electron devices (01.01.2006)
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Journal Article
A New Self-Aligned NAND Type SONOS Flash Memory with High Scaling Abilities, Fast Programming/Erase Speeds and Good Data Retention Performances
Kuo, C.-W., Yang, E.C.-S., Wei-Zhe Wong, Chin-Ming Chao, Chih-Kai Kang, Li-Wei Liu, Tzung-Bin Huang, Liang-Tai Kuo, Shi-Hsien Chen, Houng-Chi Wei, Hann-Ping Hwang, Pittikoun, S.
Published in 2006 7th Annual Non-Volatile Memory Technology Symposium (01.11.2006)
Published in 2006 7th Annual Non-Volatile Memory Technology Symposium (01.11.2006)
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Conference Proceeding
Novel Bi-directional tunneling program/erase NOR (BiNOR) type flash EEPROM
Yang, E.C.-S., Cheng-Jye Liu, Tien-Sheng Chao, Ming-Chi Liaw, Hsu, C.C.-H.
Published in 1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) (1999)
Published in 1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) (1999)
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Conference Proceeding