Highly reliable M1X MLC NAND flash memory cell with novel active air-gap and p+ poly process integration technologies
Seo, Jihyun, Han, Kyoungrok, Youn, Taeun, Heo, Hye-Eun, Jang, Sanghyun, Kim, Jongwook, Yoo, Honam, Hwang, Joowon, Yang, Cheolhoon, Lee, Heeyoul, Kim, Byungkook, Choi, Eunseok, Noh, Keumhwan, Lee, Byoungki, Lee, Byungseok, Chang, Heehyun, Park, Sungkye, Ahn, Kunok, Lee, Seokkiu, Kim, Jinwoong, Lee, Seokhee
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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