Single-Oriented Growth of (111) Cu Film on Thin ZrN/Zr Bilayered Film for ULSI Metallization
Hideto Yanagisawa, Hideto Yanagisawa, Katsutaka Sasaki, Katsutaka Sasaki, Hidekazu Miyake, Hidekazu Miyake, Yoshio Abe, Yoshio Abe
Published in Japanese Journal of Applied Physics (01.10.2000)
Published in Japanese Journal of Applied Physics (01.10.2000)
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Journal Article
Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process
Yanagisawa, Hideto, Shinkai, Satoko, Sasaki, Katsutaka, Abe, Yoshio, Sakai, Akira, Zaima, Shigeaki
Published in Japanese Journal of Applied Physics (01.01.2005)
Published in Japanese Journal of Applied Physics (01.01.2005)
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Journal Article
Study on Preparation Conditions of High-Quality ZrN Thin Films Using a Low-Temperature Process
Hideto Yanagisawa, Hideto Yanagisawa, Katsutaka Sasaki, Katsutaka Sasaki, Yoshio Abe, Yoshio Abe, Midori Kawamura, Midori Kawamura, Satoko Shinkai, Satoko Shinkai
Published in Japanese Journal of Applied Physics (01.10.1998)
Published in Japanese Journal of Applied Physics (01.10.1998)
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Journal Article
Study on Preparation Conditions of Single-Oriented (002) Zr Thin Films on n-(001) Si
Hideto Yanagisawa, Hideto Yanagisawa, Katsutaka Sasaki, Katsutaka Sasaki, Hidekazu Miyake, Hidekazu Miyake, Yoshio Abe, Yoshio Abe
Published in Japanese Journal of Applied Physics (01.07.2000)
Published in Japanese Journal of Applied Physics (01.07.2000)
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Journal Article
A Study on the Preparation Conditions of Single Oriented (002) Hf Film on n-(001) Si
Satoko Shinkai, Satoko Shinkai, Hideto Yanagisawa, Hideto Yanagisawa, Katsutaka Sasaki, Katsutaka Sasaki, Yoshio Abe, Yoshio Abe
Published in Japanese Journal of Applied Physics (01.02.1998)
Published in Japanese Journal of Applied Physics (01.02.1998)
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Realization of Cu(111) Single-Oriented State on SiO 2 by Annealing Cu–Zr Film and the Thermal Stability of Cu–Zr/ZrN/Zr/Si Contact System
Katsutaka Sasaki, Katsutaka Sasaki, Hidekazu Miyake, Hidekazu Miyake, Satoko Shinkai, Satoko Shinkai, Yoshio Abe, Yoshio Abe, Hideto Yanagisawa, Hideto Yanagisawa
Published in Japanese Journal of Applied Physics (01.07.2001)
Published in Japanese Journal of Applied Physics (01.07.2001)
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Preparation of a Contact System with a Single-Oriented (111)Al Overlayer by Interposing a Thin ZrN/Zr Bilayered Barrier Applicable to Sub-0.25-µm Design Rule
Hidekazu Miyake, Hidekazu Miyake, Hideto Yanagisawa, Hideto Yanagisawa, Katsutaka Sasaki, Katsutaka Sasaki, Satoko Shinkai, Satoko Shinkai, Yoshio Abe, Yoshio Abe
Published in Japanese Journal of Applied Physics (01.06.2001)
Published in Japanese Journal of Applied Physics (01.06.2001)
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Journal Article
Formation Process and Electrical Property of RuO 2 Thin Films Prepared by Reactive Sputtering
Yukinao Kaga, Yukinao Kaga, Yoshio Abe, Yoshio Abe, Hideto Yanagisawa, Hideto Yanagisawa, Katsutaka Sasaki, Katsutaka Sasaki
Published in Japanese Journal of Applied Physics (01.06.1998)
Published in Japanese Journal of Applied Physics (01.06.1998)
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Journal Article
Initial Silicide Formation Process of Single Oriented (002) Hf Film on Si and Its Diffusion Barrier Property
Satoko Shinkai, Satoko Shinkai, Katsutaka Sasaki, Katsutaka Sasaki, Yoshio Abe, Yoshio Abe, Hideto Yanagisawa, Hideto Yanagisawa
Published in Japanese Journal of Applied Physics (01.04.1998)
Published in Japanese Journal of Applied Physics (01.04.1998)
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Journal Article
Preparation of Cu 10 Zr 7 Intermetallic Compound Film and Its Application as a Diffusion Barrier in Cu/Cu 10 Zr 7 /ZrN/Si Contact System
Ken-ichi Yoshimoto, Ken-ichi Yoshimoto, Hideto Yanagisawa, Hideto Yanagisawa, Katsutaka Sasaki, Katsutaka Sasaki
Published in Japanese Journal of Applied Physics (01.12.1997)
Published in Japanese Journal of Applied Physics (01.12.1997)
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Journal Article
PREPARATION OF A CONTACT SYSTEM WITH A SINGLE-ORIENTED (111)Al OVERLAYER BY INTERPOSING A THIN ZrN/Zr BILAYERED BARRIER APPLICABLE TO SUB-0.25-mu m DESIGN RULE
Miyake, H, Yanagisawa, Y, Sasaki, K, Shinkai, S, Abe, Y
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 6A, pp. 4193-4194. 2001 (01.06.2001)
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 6A, pp. 4193-4194. 2001 (01.06.2001)
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