Source-drain burnout mechanism of GaAs power MESFETS: Three terminal effects
Takamiya, Saburo, Sonoda, Takuji, Yamanouchi, Masahide, Fujioka, Takashi, Kohno, Masaki
Published in Solid-state electronics (01.03.1997)
Published in Solid-state electronics (01.03.1997)
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Journal Article
High-efficiency and highly reliable 20 W GaAs power field-effect transistor in C band
SONODA, T, SAKAMOTO, S, KASAI, N, YAMANOUCHI, M, TAKAMIYA, S, KASHIMOTO, Y
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE (01.08.1992)
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE (01.08.1992)
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Journal Article
A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit technique
Yamamoto, K., Suzuki, S., Mori, K., Asada, T., Okuda, T., Inoue, A., Miura, T., Chomei, K., Hattori, R., Yamanouchi, M., Shimura, T.
Published in IEEE journal of solid-state circuits (01.08.2000)
Published in IEEE journal of solid-state circuits (01.08.2000)
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Journal Article
A New Dew-Point Hygrometry Making Use of β-Ray Scattering
KOBAYASHI, Hisanobu, MATSUMOTO, Shigeaki, YAMANOUCHI, Masahide, TOYOHKA, Satoru
Published in RADIOISOTOPES (15.12.1971)
Published in RADIOISOTOPES (15.12.1971)
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Journal Article
Reliability of Super Low Noise HEMTs
Hayashi, K., Sonoda, T., Yamaguchi, T., Nagahamar, K., Yamanouchi, M., Takamiya, S., Mitsui, S.
Published in 1987 IEEE MTT-S International Microwave Symposium Digest (1987)
Published in 1987 IEEE MTT-S International Microwave Symposium Digest (1987)
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Conference Proceeding
A New Dew-Point Hygrometry Making Use of β-Ray Scattering
KOBAYASHI, Hisanobu, MATSUMOTO, Shigeaki, YAMANOUCHI, Masahide, TOYOHKA, Satoru
Published in Radioisotopes (1971)
Published in Radioisotopes (1971)
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Journal Article