Search Results - "Yamabe, Kikuo" :: K.UTB vyhledávací portál

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Precise fabrication of uniform sub-10-nm-diameter cylindrical silicon nanopillars via oxidation control

by Ye, Shujun, Yamabe, Kikuo, Endoh, Tetsuo
Published in Scripta materialia (01.06.2021)

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Low-density oxide grown thermally on sidewall of Si nanopillars

by Ye, Shujun, Yamabe, Kikuo, Endoh, Tetsuo
Published in Materials letters (01.01.2020)

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Oxidation-induced stress in Si nanopillars

by Ye, Shujun, Yamabe, Kikuo, Endoh, Tetsuo
Published in Journal of materials science (01.08.2019)

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Relationship between electrical properties and interface structures of SiO2/4H-SiC prepared by dry and wet oxidation

by Indari, Efi Dwi, Yamashita, Yoshiyuki, Hasunuma, Ryu, Oji, Hiroshi, Yamabe, Kikuo
Published in AIP advances (01.10.2019)

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Variance Reduction during the Fabrication of Sub-20 nm Si Cylindrical Nanopillars for Vertical Gate-All-Around Metal-Oxide-Semiconductor Field-Effect Transistors

by Ye, Shujun, Yamabe, Kikuo, Endoh, Tetsuo
Published in ACS omega (17.12.2019)

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Analysis of Nitrogen State on MOS Interface of 4H-SiC m-Face after Nitric Oxide Post Oxidation Annealing (NO-POA)

by Hamada, Kimimori, Mikami, Akira, Naruoka, Hideki, Yamabe, Kikuo
Published in E-journal of surface science and nanotechnology (01.01.2017)

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Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface

by Indari, Efi Dwi, Yamashita, Yoshiyuki, Hasunuma, Ryu, Nagata, Takahiro, Ueda, Shigenori, Yamabe, Kikuo
Published in AIP advances (01.04.2019)

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Non uniform thermal oxidation of SiC and its impact on electrical characteristics

by Nagai, Ryu, Hasunuma, Ryu, Yamabe, Kikuo
Published in Japanese Journal of Applied Physics (01.08.2016)

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Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching

by Hasunuma, Ryu, Yamabe, Kikuo
Published in Japanese Journal of Applied Physics (01.11.2013)

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Evaluation of thermal resistance of carbon nanotube film fabricated using an improved slope control of temperature profile growth

by Kawabata, Akio, Murakami, Tomo, Nihei, Mizuhisa, Yamabe, Kikuo, Yokoyama, Naoki
Published in Japanese Journal of Applied Physics (01.04.2015)

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Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor

by Sato, Soshi, Yamabe, Kikuo, Endoh, Tetsuo, Niwa, Masaaki
Published in Microelectronics and reliability (01.03.2016)

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Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface

by Higashi, Yusuke, Takaishi, Riichiro, Kato, Koichi, Suzuki, Masamichi, Nakasaki, Yasushi, Tomita, Mitsuhiro, Mitani, Yuichiro, Matsumoto, Masuaki, Ogura, Shohei, Fukutani, Katsuyuki, Yamabe, Kikuo
Published in Microelectronics and reliability (01.03.2017)

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Microscopic Thickness Uniformity and Time-Dependent Dielectric Breakdown Lifetime Dispersion of Thermally Grown Ultrathin SiO2 Film on Atomically Flat Si Surface

by Hasunuma, Ryu, Hayashi, Yusuke, Ota, Masahiro, Yamabe, Kikuo
Published in Jpn J Appl Phys (01.03.2013)

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Growth of atomically step-free surface on diamond {111} mesas

by Tokuda, Norio, Umezawa, Hitoshi, Yamabe, Kikuo, Okushi, Hideyo, Yamasaki, Satoshi
Published in Diamond and related materials (01.04.2010)

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Spectroscopic Observation of the Interface States at the SiO2/4H-SiC(0001) Interface

by Yamashita, Yoshiyuki, Nagata, Takahiro, Chikyow, Toyohiro, Hasunuma, Ryu, Yamabe, Kikuo
Published in E-journal of surface science and nanotechnology (04.07.2019)

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Oxidation characteristics of silicon exposed to O(1D2) and O(3P2) radicals and stress-relaxation oxidation model for O(1D2) radicals

by Kabe, Yoshiro, Hasunuma, Ryu, Yamabe, Kikuo
Published in Japanese Journal of Applied Physics (01.03.2014)

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Oxidation of Silicon Utilizing a Microwave Plasma System: Electric-Stress Hardening of SiO2 Films by Controlling the Surface and Interface Roughness

by Kabe, Yoshiro, Hasunuma, Ryu, Yamabe, Kikuo
Published in Jpn J Appl Phys (01.04.2012)

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Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal-oxide-semiconductor capacitors

by Sato, Soshi, Hiroi, Yuki, Yamabe, Kikuo, Kitabatake, Makoto, Endoh, Tetsuo, Niwa, Masaaki
Published in Japanese Journal of Applied Physics (01.08.2014)

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Direct observation of two-dimensional growth at SiO2/Si(111) interface

by HOJO, Daisuke, TOKUDA, Norio, YAMABE, Kikuo
Published in Thin solid films (31.07.2007)

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Atomically flat diamond (111) surface formation by homoepitaxial lateral growth

by Tokuda, Norio, Umezawa, Hitoshi, Ri, Sung-Gi, Ogura, Masahiko, Yamabe, Kikuo, Okushi, Hideyo, Yamasaki, Satoshi
Published in Diamond and related materials (01.07.2008)

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