Quantum Oscillations of Magnetoresistance in HgCdTe/HgTe/HgCdTe Heterostructures with Inverted Band Spectrum
Bogoliubskii, A. S., Gudina, S. V., Neverov, V. N., Turutkin, K. V., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A.
Published in Physics of the solid state (01.03.2022)
Published in Physics of the solid state (01.03.2022)
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“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase
Gudina, S. V., Bogolyubskii, A. S., Neverov, V. N., Shelushinina, N. G., Yakunin, M. V.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2018)
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Journal Article
Magnetoresistance of a HgTe/CdHgTe Double Quantum Well in an In-Plane Magnetic Field
Yakunin, M. V., Aleshkin, V. Ya, Neverov, V. N., Popov, M. R., Mikhailov, N. N., Dvoretsky, S. A.
Published in JETP letters (01.12.2023)
Published in JETP letters (01.12.2023)
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Journal Article
On the Thermal Activation of Conductivity Electrons in a p-Type HgTe/CdHgTe Double Quantum Well with HgTe Layers of Critical Width
Podgornykh, S. M., Yakunin, M. V., Krishtopenko, S. S., Popov, M. R., Mikhailov, N. N., Dvoretskii, S. A.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2019)
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Journal Article
Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations
Neverov, V. N., Bogolubskii, A. S., Gudina, S. V., Podgornykh, S. M., Turutkin, K. V., Popov, M. R., Shelushinina, N. G., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A.
Published in Semiconductors (Woodbury, N.Y.) (01.08.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.08.2020)
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Journal Article
Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures
Gudina, S. V., Arapov, Yu. G., Ilchenko, E. I., Neverov, V. N., Savelyev, A. P., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V., Vasil’evskii, I. S., Vinichenko, A. N.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
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The key role of a smooth impurity potential in formation of the hole spectrum for p-Ge/Ge1-xSix heterostructures in the quantum Hall regime
Arapov, Yu G, Alshanskii, G A, Harus, G I, Neverov, V N, Shelushinina, N G, Yakunin, M V, Kuznetsov, O A
Published in Nanotechnology (01.02.2002)
Published in Nanotechnology (01.02.2002)
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Journal Article
Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure
Arapov, Yu. G., Gudina, S. V., Neverov, V. N., Podgornykh, S. M., Popov, M. R., Harus, G. I., Shelushinina, N. G., Yakunin, M. V., Dvoretsky, S. A., Mikhailov, N. N.
Published in Journal of low temperature physics (01.12.2016)
Published in Journal of low temperature physics (01.12.2016)
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Journal Article
Electron Effective Mass and g Factor in Wide HgTe Quantum Wells
Gudina, S. V., Neverov, V. N., Ilchenko, E. V., Bogolubskii, A. S., Harus, G. I., Shelushinina, N. G., Podgornykh, S. M., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2018)
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Journal Article
Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures
Gudina, S. V., Arapov, Yu. G., Ilchenko, E. V., Neverov, V. N., Savelyev, A. P., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V., Vasil’evskii, I. S., Vinichenko, A. N.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
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Journal Article
Quantum Hall transitions in the presence of Landau levels mixing in n-InGaAs/InAlAs structures
Gudina, S V, Arapov, Yu G, Ilchenko, E V, Neverov, V N, Savelyev, A P, Podgornykh, S M, Shelushinina, N G, Yakunin, M V, Vasil'evskii, I S, Vinichenko, A N
Published in IOP conference series. Materials Science and Engineering (18.02.2019)
Published in IOP conference series. Materials Science and Engineering (18.02.2019)
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Journal Article
The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination
Arapov, Yu. G., Gudina, S. V., Klepikova, A. S., Neverov, V. N., Harus, G. I., Shelushinina, N. G., Yakunin, M. V.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2017)
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Journal Article
Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs
Gudina, S V, Arapov, Yu G, Saveliev, A P, Neverov, V N, Podgornykh, S M, Shelushinina, N G, Yakunin, M V, I. S. Vasil’evskii, Vinichenko, A N
Published in Semiconductors (Woodbury, N.Y.) (01.12.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2016)
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Journal Article
Probing the p-Ge1-xSix/Ge/p-Ge1-xSix quantum well by means of the quantum Hall effect
Arapov, Yu G, Harus, G I, Neverov, V N, Shelushinina, N G, Yakunin, M V, Alshanskii, G A, Kuznetsov, O A
Published in Nanotechnology (01.12.2000)
Published in Nanotechnology (01.12.2000)
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Journal Article
The suppression of magnetic level coincidences in tilted magnetic fields in the HgTe quantum well as a consequence of electronic phase transitions under quantum hall effect conditions
Yakunin, M. V., Suslov, A. V., Dvoretskii, S. A., Mikhailov, N. N.
Published in Bulletin of the Russian Academy of Sciences. Physics (01.02.2012)
Published in Bulletin of the Russian Academy of Sciences. Physics (01.02.2012)
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Journal Article
Effect of impurity potential range on a scaling behavior in the quantum Hall regime
Arapov, Yu.G., Harus, G.I., Karskanov, I.V., Neverov, V.N., Shelushinina, N.G., Yakunin, M.V.
Published in Physica. B, Condensed matter (15.12.2009)
Published in Physica. B, Condensed matter (15.12.2009)
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