Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands
Novikov, A.V, Andreev, B.A, Vostokov, N.V, Drozdov, Yu.N, Krasilnik, Z.F, Lobanov, D.N, Moldavskaya, L.D, Yablonskiy, A.N, Miura, M, Usami, N, Shiraki, Y, Valakh, M.Ya, Mestres, N, Pascual, J
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
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UPCONVERSION LUMINESCENCE OF [Er.sup.3+] IONS FROM BARIUM TITANATE XEROGEL POWDER AND TARGET FABRICATED BY EXPLOSIVE COMPACTION METHOD
Gaponenko, N.V, Sudnik, L.V, Vityaz, P.A, Luchanok, A.R, Stepikhova, M.V, Yablonskiy, A.N, Lashkovskaya, E.I, Shustsikava, K.V, Radyush, Yu.V, Zhivulko, V.D, Mudryi, A.V, Kazuchits, N.M, Rusetsky, M.S
Published in Journal of applied spectroscopy (01.05.2022)
Published in Journal of applied spectroscopy (01.05.2022)
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Features of spectral properties of Sm3+ complexes with dithia- and diselenophosphinate ligands
Pushkarev, A.P., Yablonskiy, A.N., Yunin, P.A., Burin, M.E., Andreev, B.A., Bochkarev, M.N.
Published in Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy (15.06.2016)
Published in Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy (15.06.2016)
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On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
Aleshkin, V. Ya, Baidus, N. V., Dubinov, A. A., Krasilnik, Z. F., Nekorkin, S. M., Novikov, A. V., Rykov, A. V., Yurasov, D. V., Yablonskiy, A. N.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2017)
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Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates
Baidus, N. V., Aleshkin, V. Ya, Dubinov, A. A., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Pavlov, D. A., Rykov, A. V., Sushkov, A. A., Shaleev, M. V., Yunin, P. A., Yurasov, D. V., Yablonskiy, A. N., Krasilnik, Z. F.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2017)
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Luminescent properties of MBE-grown Si:Er/SOI structures
Andreev, B.A., Krasilnik, Z.F., Kryzhkov, D.I., Shengurov, D.V., Yablonskiy, A.N., Kuznetsov, V.P.
Published in Journal of luminescence (01.12.2012)
Published in Journal of luminescence (01.12.2012)
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Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation
Andreev, B. A., Krasilnik, Z. F., Kryzhkov, D. I., Kuznetsov, V. P., Yablonskiy, A. N.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2012)
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Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells
Aleshkin, V. Ya, Dubinov, A. A., Drozdov, M. N., Zvonkov, B. N., Kudryavtsev, K. E., Tonkikh, A. A., Yablonskiy, A. N., Werner, P.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2013)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2013)
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Journal Article
Special features of the excitation spectra and kinetics of photoluminescence of the [Si.sub.1 - x][Ge.sub.x]:Er/Si structures with relaxed heterolayers
Krasilnikova, L.V, Yablonskiy, A.N, Stepikhova, M.V, Drozdov, Yu. N, Shengurov, V.G, Krasilnik, Z.F
Published in Semiconductors (Woodbury, N.Y.) (01.11.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2010)
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Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures
Zhukavin, R. Kh, Kovalevsky, K. A., Orlov, M. L., Tsyplenkov, V. V., Bekin, N. A., Yablonskiy, A. N., Yunin, P. A., Pavlov, S. G., Abrosimov, N. V., Hübers, H. -W., Radamson, H. H., Shastin, V. N.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2015)
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Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping
Yablonskiy, A. N., Andreev, B. A., Kryzhkov, D. I., Kuznetsov, V. P., Shengurov, D. V., Krasilnik, Z. F.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2012)
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Journal Article
Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers
Shaleev, M. V., Novikov, A. V., Baydakova, N. A., Yablonskiy, A. N., Kuznetsov, O. A., Lobanov, D. N., Krasilnik, Z. F.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2011)
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Journal Article
Guiding effect of quantum wells in semiconductor lasers
Aleshkin, V.Ya, Dikareva, N.V., Dubinov, A.A., Zvonkov, B.N., Karzanova, M.V., Kudryavtsev, K.E., Nekorkin, S.M., Yablonskiy, A.N.
Published in Quantum electronics (Woodbury, N.Y.) (01.01.2013)
Published in Quantum electronics (Woodbury, N.Y.) (01.01.2013)
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Journal Article
Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3–1.55 μm
Lobanov, D.N., Novikov, A.V., Kudryavtsev, K.E., Yablonskiy, A.N., Antonov, A.V., Drozdov, Yu.N., Shengurov, D.V., Shmagin, V.B., Krasilnik, Z.F., Zakharov, N.D., Werner, P.
Published in Physica. E, Low-dimensional systems & nanostructures (01.05.2009)
Published in Physica. E, Low-dimensional systems & nanostructures (01.05.2009)
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Kinetics of terahertz photoconductivity in p-Ge under impurity breakdown conditions
Morozov, S. V., Marem’yanin, K. V., Erofeeva, I. V., Yablonskiy, A. N., Antonov, A. V., Gavrilenko, L. V., Rumyantsev, V. V., Gavrilenko, V. I.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2010)
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Journal Article
Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PL
Yablonskiy, A.N., Krasilnikova, L.V., Andreev, B.A., Kryzhkov, D.I., Kuznetsov, V.P., Krasilnik, Z.F.
Published in Physica. B, Condensed matter (15.12.2009)
Published in Physica. B, Condensed matter (15.12.2009)
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