A 146-mm/sup 2/ 8-gb multi-level NAND flash memory with 70-nm CMOS technology
Hara, T., Fukuda, K., Kanazawa, K., Shibata, N., Hosono, K., Maejima, H., Nakagawa, M., Abe, T., Kojima, M., Fujiu, M., Takeuchi, Y., Amemiya, K., Morooka, M., Kamei, T., Nasu, H., Chi-Ming Wang, Sakurai, K., Tokiwa, N., Waki, H., Maruyama, T., Yoshikawa, S., Higashitani, M., Pham, T.D., Yupin Fong, Watanabe, T.
Published in IEEE journal of solid-state circuits (01.01.2006)
Published in IEEE journal of solid-state circuits (01.01.2006)
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Journal Article
A 146-mm2 8-Gb multi-level NAND flash memory with 70-nm CMOS technology
HARA, Takahiko, FUKUDA, Koichi, TAKEUCHI, Yoshiaki, AMEMIYA, Kazumi, MOROOKA, Midori, KAMEI, Teruhiko, NASU, Hiroaki, WANG, Chi-Ming, SAKURAI, Kiyofumi, TOKIWA, Naoya, WAKI, Hiroko, MARUYAMA, Tohru, KANAZAWA, Kazuhisa, YOSHIKAWA, Susumu, HIGASHITANI, Masaaki, PHAM, Tuan D, YUPIN FONG, WATANABE, Toshiharu, SHIBATA, Noboru, HOSONO, Koji, MAEJIMA, Hiroshi, NAKAGAWA, Michio, ABE, Takumi, KOJIMA, Masatsugu, FUJIU, Masaki
Published in IEEE journal of solid-state circuits (2006)
Published in IEEE journal of solid-state circuits (2006)
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Conference Proceeding
Journal Article
A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate
Yan Li, Seungpil Lee, Yupin Fong, Feng Pan, Tien-Chien Kuo, Jongmin Park, Samaddar, T., Hao Thai Nguyen, Mui, M.L., Htoo, K., Kamei, T., Higashitani, M., Yero, E., Gyuwan Kwon, Kliza, P., Jun Wan, Kaneko, T., Maejima, H., Shiga, H., Hamada, M., Fujita, N., Kanebako, K., Tam, E., Koh, A., Lu, I., Kuo, C.C.-H., Pham, T., Huynh, J., Qui Nguyen, Chibvongodze, H., Watanabe, M., Oowada, K., Shah, G., Woo, B., Gao, R., Chan, J., Lan, J., Hong, P., Liping Peng, Das, D., Ghosh, D., Kalluru, V., Kulkarni, S., Cernea, R.-A., Huynh, S., Pantelakis, D., Chi-Ming Wang, Quader, K.
Published in IEEE journal of solid-state circuits (01.01.2009)
Published in IEEE journal of solid-state circuits (01.01.2009)
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Conference Proceeding
128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode
Yan Li, Seungpil Lee, Oowada, K., Hao Nguyen, Qui Nguyen, Mokhlesi, N., Hsu, C., Li, J., Ramachandra, V., Kamei, T., Higashitani, M., Pham, T., Honma, M., Watanabe, Y., Ino, K., Binh Le, Byungki Woo, Khin Htoo, Tai-Yuan Tseng, Pham, L., Tsai, F., Kwang-ho Kim, Yi-Chieh Chen, Min She, Jong Yuh, Chu, A., Chen Chen, Puri, R., Hung-Szu Lin, Yi-Fang Chen, Mak, W., Huynh, J., Jim Chan, Watanabe, M., Yang, D., Shah, G., Souriraj, P., Tadepalli, D., Tenugu, S., Gao, R., Popuri, V., Azarbayjani, B., Madpur, R., Lan, J., Yero, E., Feng Pan, Hong, P., Jang Yong Kang, Moogat, F., Yupin Fong, Cernea, R., Huynh, S., Trinh, C., Mofidi, M., Shrivastava, R., Quader, K.
Published in 2012 IEEE International Solid-State Circuits Conference (01.02.2012)
Published in 2012 IEEE International Solid-State Circuits Conference (01.02.2012)
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Conference Proceeding
A 34 Mb 3.3 V serial flash EEPROM for solid-state disk applications
Cernea, R., Lee, D.J., Mofidi, M., Chang, E.Y., Wy-Yi Chien, Goh, L., Yupin Fong, Yuan, J.H., Samachisa, G., Guterman, D.C., Mehrotra, S., Sato, K., Onishi, H., Ueda, K., Noro, F., Mijamoto, K., Morita, M., Umeda, K., Kubo, K.
Published in Proceedings ISSCC '95 - International Solid-State Circuits Conference (1995)
Published in Proceedings ISSCC '95 - International Solid-State Circuits Conference (1995)
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Conference Proceeding
A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate
Li, Yan, Lee, Seungpil, Fong, Yupin, Pan, Feng, Kuo, Tien-Chien, Park, Jong, Samaddar, Tapan, Nguyen, Hao, Mui, Man, Htoo, Khin, Kamei, Teruhiko, Higashitani, Masaaki, Yero, Emilio, Kwon, Gyuwan, Kliza, Phil, Wan, Jun, Kaneko, Tetsuya, Maejima, Hiroshi, Shiga, Hitoshi, Hamada, Makoto, Fujita, Norihiro, Kanebako, Kazunori, Tam, Eugene, Koh, Anne, Lu, Iris, Kuo, Calvin, Pham, Trung, Huynh, Jonathan, Nguyen, Qui, Chibvongodze, Hardwell, Watanabe, Mitsuyuki, Oowada, Ken, Shah, Grishma, Woo, Byungki, Gao, Ray, Chan, James, Lan, James, Hong, Patrick, Peng, Liping, Das, Debi, Ghosh, Dhritiman, Kalluru, Vivek, Kulkarni, Sanjay, Cernea, Raul, Huynh, Sharon, Pantelakis, Dimitris, Wang, Chi-Ming, Quader, Khandker
Published in 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers (01.02.2008)
Published in 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers (01.02.2008)
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Conference Proceeding
A 146-mm super(2) 8-gb multi-level NAND flash memory with 70-nm CMOS technology
Hara, T, Fukuda, K, Kanazawa, K, Shibata, N, Hosono, K, Maejima, H, Nakagawa, M, Abe, T, Kojima, M, Fujiu, M, Takeuchi, Y, Amemiya, K, Morooka, M, Kamei, T, Nasu, H, Wang, Chi-Ming, Sakurai, K, Tokiwa, N, Waki, H, Maruyama, T, Yoshikawa, S, Higashitani, M, Pham, T D, Fong, Yupin, Watanabe, T
Published in IEEE journal of solid-state circuits (01.01.2006)
Published in IEEE journal of solid-state circuits (01.01.2006)
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Journal Article