AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
Shu Yang, Shenghou Liu, Yunyou Lu, Cheng Liu, Chen, Kevin J.
Published in IEEE transactions on electron devices (01.06.2015)
Published in IEEE transactions on electron devices (01.06.2015)
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Journal Article
600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
ZHIKAI TANG, QIMENG JIANG, YUNYOU LU, SEN HUANG, SHU YANG, XI TANG, CHEN, Kevin J
Published in IEEE electron device letters (01.11.2013)
Published in IEEE electron device letters (01.11.2013)
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Journal Article
High-Quality Interface in Al2O3/GaN/AlGaN/GaN MIS Structures With In Situ Pre-Gate Plasma Nitridation
SHU YANG, ZHIKAI TANG, WONG, King-Yuen, LIN, Yu-Syuan, CHENG LIU, YUNYOU LU, SEN HUANG, CHEN, Kevin J
Published in IEEE electron device letters (01.12.2013)
Published in IEEE electron device letters (01.12.2013)
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Journal Article
Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor
Wei, Jin, Liu, Shenghou, Li, Baikui, Tang, Xi, Lu, Yunyou, Liu, Cheng, Hua, Mengyuan, Zhang, Zhaofu, Tang, Gaofei, Chen, Kevin J.
Published in IEEE electron device letters (01.12.2015)
Published in IEEE electron device letters (01.12.2015)
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Journal Article
1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform
Qimeng Jiang, Cheng Liu, Yunyou Lu, Chen, K. J.
Published in IEEE electron device letters (01.03.2013)
Published in IEEE electron device letters (01.03.2013)
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Journal Article
Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
Mengyuan Hua, Yunyou Lu, Shenghou Liu, Cheng Liu, Kai Fu, Yong Cai, Baoshun Zhang, Chen, Kevin J.
Published in IEEE electron device letters (01.03.2016)
Published in IEEE electron device letters (01.03.2016)
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Journal Article
Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs
Chen, Kevin J., Yang, Shu, Tang, Zhikai, Huang, Sen, Lu, Yunyou, Jiang, Qimeng, Liu, Shenghou, Liu, Cheng, Li, Baikui
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
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Journal Article
Normally off Al2O3-AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation
Yunyou Lu, Baikui Li, Xi Tang, Qimeng Jiang, Shu Yang, Zhikai Tang, Chen, Kevin J.
Published in IEEE transactions on electron devices (01.03.2015)
Published in IEEE transactions on electron devices (01.03.2015)
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Journal Article
Investigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges
Yang, Song, Tang, Zhikai, Hua, Mengyuan, Zhang, Zhaofu, Wei, Jin, Lu, Yunyou, Chen, Kevin J.
Published in IEEE journal of the Electron Devices Society (2020)
Published in IEEE journal of the Electron Devices Society (2020)
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Journal Article
Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs
Lu, Yunyou, Yang, Shu, Jiang, Qimeng, Tang, Zhikai, Li, Baikui, Chen, Kevin J.
Published in Physica status solidi. C (01.11.2013)
Published in Physica status solidi. C (01.11.2013)
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Journal Article
600-V Normally Off /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
Zhikai Tang, Qimeng Jiang, Yunyou Lu, Sen Huang, Shu Yang, Xi Tang, Chen, Kevin J.
Published in IEEE electron device letters (01.11.2013)
Published in IEEE electron device letters (01.11.2013)
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Journal Article
High-Quality Interface in //// MIS Structures With In Situ Pre-Gate Plasma Nitridation
Shu Yang, Zhikai Tang, King-Yuen Wong, Yu-Syuan Lin, Cheng Liu, Yunyou Lu, Sen Huang, Chen, Kevin J.
Published in IEEE electron device letters (01.12.2013)
Published in IEEE electron device letters (01.12.2013)
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Journal Article
Impact of Vth shift on Ron in E/D-mode GaN-on-Si power transistors: Role of dynamic stress and gate overdrive
Shu Yang, Yunyou Lu, Shenghou Liu, Hanxing Wang, Cheng Liu, Chen, Kevin J.
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Conference Proceeding
Journal Article
650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric
Mengyuan Hua, Cheng Liu, Shu Yang, Shenghou Liu, Yunyou Lu, Kai Fu, Zhihua Dong, Yong Cai, Baoshun Zhang, Chen, Kevin J.
Published in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2015)
Published in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2015)
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Conference Proceeding
Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance
Cheng Liu, Hanxing Wang, Shu Yang, Yunyou Lu, Shenghou Liu, Zhikai Tang, Qimeng Jiang, Sen Huang, Chen, Kevin J.
Published in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2015)
Published in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2015)
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Conference Proceeding
High-voltage enhancement/Depletion-mode AlGaN/GaN HEMTs on modified SOI substrates
Qimeng Jiang, Cheng Liu, Yunyou Lu, Chen, Kevin J.
Published in 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2013)
Published in 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2013)
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Conference Proceeding
Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques
Shu Yang, Zhikai Tang, King-Yuen Wong, Yu-Syuan Lin, Yunyou Lu, Sen Huang, Chen, Kevin J.
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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Conference Proceeding
Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes
Shu Yang, Shenghou Liu, Cheng Liu, Zhikai Tang, Yunyou Lu, Chen, Kevin J.
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
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Conference Proceeding