A simulation study on novel field stop IGBTs using superjunction
OH, Kwang-Hoon, LEE, Jaegil, LEE, Kyu-Hyun, YOUNG CHUL KIM, YUN, Chongman
Published in IEEE transactions on electron devices (01.04.2006)
Published in IEEE transactions on electron devices (01.04.2006)
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Journal Article
Experimental investigation of 650V superjunction IGBTs
Oh, Kwang-Hoon, Kim, Jisun, Seo, Hoewon, Jung, Jinyoung, Kim, Euntaek, Kim, Soo-Seong, Yun, Chongman
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Conference Proceeding
Journal Article
Experimental Investigation of Pulsed-Laser-Annealed Ultralow-Conduction-Loss 600-V Nonpunchthrough Insulated-Gate Bipolar Transistors
Oh, Kwang-Hoon, Lee, Seung Chul, Kim, Eun-Taek, Lee, Jong Hun, Lee, Kyu-Hyun, Kim, Soo-Seong, Yun, Chongman
Published in IEEE transactions on electron devices (01.11.2007)
Published in IEEE transactions on electron devices (01.11.2007)
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Journal Article
A 600V FS-IGBT using locally isolated P-well structures for improved short circuit ruggedness
Kim, Jisun, Kim, Sooseong, Oh, Kwang-Hoon, Yun, Chongman
Published in 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) (01.06.2015)
Published in 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) (01.06.2015)
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Conference Proceeding
Journal Article
Power semiconductor device capable of controlling slope of current and voltage during dynamic switching
YUN CHONGMAN, KIM SOO SEONG, JUNG JIN YOUNG, OH KWANG HOON, CHOI JUNYOUNG
Year of Publication 08.04.2022
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Year of Publication 08.04.2022
Patent
Silicon Carbide power semiconductor device with extended halo region and manufacturing method thereof
YUN CHONGMAN, KIM SOO SEONG, JEON JI HO, JUNG JIN YOUNG, OH KWANG HOON
Year of Publication 23.09.2022
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Year of Publication 23.09.2022
Patent