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"YU LIUJIANG"
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"YU LIUJIANG"
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Implantation method and structure capable of enhancing writing speed of floating body dynamic random access memory unit
by
YU LIUJIANG
Year of Publication
04.06.2014
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42
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Method for improving reading redundancy of static random access memory
by
YU LIUJIANG
Year of Publication
28.05.2014
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43
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Method for increasing writing speed of floating body dynamic random access memory
by
YU LIUJIANG
Year of Publication
28.05.2014
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44
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Through hole etching method, integrated circuit manufacturing method and integrated circuit
by
YU LIUJIANG
Year of Publication
14.05.2014
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45
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Method for improving write margin of static random access memory (SRAM)
by
YU LIUJIANG
Year of Publication
30.04.2014
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46
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ACT dummy insert method used for raising semiconductor device performance
by
YU LIUJIANG
Year of Publication
30.04.2014
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47
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Method for improving readout redundancy of static random access memory
by
YU LIUJIANG
Year of Publication
02.04.2014
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48
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Method for improving writing redundancy of static random access memory
by
YU LIUJIANG
Year of Publication
02.04.2014
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49
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Method for making floating dynamic random access memory unit capable of increasing writing speed
by
YU LIUJIANG
Year of Publication
02.04.2014
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50
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Method for reducing semiconductor device hot carrier injection damage
by
YU LIUJIANG
Year of Publication
12.03.2014
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51
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Gate etching method capable of enhancing performance of floating body dynamic random access memory unit
by
YU LIUJIANG
Year of Publication
12.03.2014
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52
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Method used for improving dual contact-etch-stop-layer crossover region contact etch
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YU LIUJIANG
Year of Publication
12.03.2014
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53
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Method for improving write margin of static random access memory
by
YU LIUJIANG
Year of Publication
26.02.2014
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54
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Static random access memory in embedded germanium silicon process and write-in redundancy improving method
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YU LIUJIANG
Year of Publication
12.02.2014
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55
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Static random access memory in hybrid orientation technology and method for improving write margin
by
YU LIUJIANG
Year of Publication
12.02.2014
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Method for improving writing-in redundancy rate of static random access memory
by
YU LIUJIANG
Year of Publication
12.02.2014
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Static random access memory and method for improving writing-in redundancy rate of static random access memory
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YU LIUJIANG
Year of Publication
12.02.2014
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Method for reducing shadow effect in technology for preparing static random access memory
by
YU LIUJIANG
Year of Publication
22.01.2014
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59
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Method for lowering trap led-out resistance
by
YU LIUJIANG
Year of Publication
22.01.2014
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Method for improving reading redundancy rate of static random access memory
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YU LIUJIANG
Year of Publication
18.12.2013
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