Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range
Ghandi, Reza, Cheng-Po Chen, Liang Yin, Xingguang Zhu, Liangchun Yu, Arthur, Stephen, Ahmad, Faisal, Sandvik, Peter
Published in IEEE electron device letters (01.12.2014)
Published in IEEE electron device letters (01.12.2014)
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Journal Article
High-Frequency Switching of SiC High-Voltage LJFET
Kuang Sheng, Yongxi Zhang, Liangchun Yu, Ming Su, Zhao, J.H.
Published in IEEE transactions on power electronics (01.01.2009)
Published in IEEE transactions on power electronics (01.01.2009)
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Journal Article
Oxide Reliability of SiC MOS Devices
Liangchun Yu, Cheung, K.P., Campbell, J., Suehle, J.S., Kuang Sheng
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01.10.2008)
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01.10.2008)
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Conference Proceeding
High Frequency Switching of SiC High Voltage LJFET
Kuang Sheng, Yongxi Zhang, Ming Su, Liangchun Yu, Zhao, J.H.
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01.05.2008)
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01.05.2008)
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Conference Proceeding
An analysis of the characteristics of Chinese listed companies’ independent director system
Jinsong, TAN, Minyi, LI, Wenjing, LI, Heng, ZHENG, Jianlin, WU, Yu, LIANG
Published in Frontiers of business research in China (01.07.2007)
Published in Frontiers of business research in China (01.07.2007)
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Journal Article