Semiconductor device with p=n junction, e.g n=channel transistor - has impurity diffusion region between first impurity region and impurity concentration peak
MITSUNAGA, KAZUMASA, AMAGASAKI, HYOGO, JP, YOSHIDA, HISAAKI, ITAMI, HYOGO, JP, MOTONAMI, KAORU, ITAMI, HYOGO, JP
Year of Publication 10.02.1994
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Year of Publication 10.02.1994
Patent