Search Results - "YOSHIDA, SEIKOH" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

GaN Power Transistors on Si Substrates for Switching Applications

GaN Power Transistors on Si Substrates for Switching Applications

by Ikeda, Nariaki, Niiyama, Yuki, Kambayashi, Hiroshi, Sato, Yoshihiro, Nomura, Takehiko, Kato, Sadahiro, Yoshida, Seikoh
Published in Proceedings of the IEEE (01.07.2010)

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Journal Article

High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching

High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching

by Nomura, Takehiko, Kambayashi, Hiroshi, Masuda, Mitsuru, Ishii, Sonomi, Ikeda, Nariaki, Lee, Jiang, Yoshida, Seikoh
Published in IEEE transactions on electron devices (01.12.2006)

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Journal Article

Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation

Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation

by Kambayashi, H., Niiyama, Y., Ootomo, S., Nomura, T., Iwami, M., Satoh, Y., Kato, S., Yoshida, S.
Published in IEEE electron device letters (01.12.2007)

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Journal Article

Over 55 A, 800 V high power AlGaN/GaN HFETs for power switching application

Over 55 A, 800 V high power AlGaN/GaN HFETs for power switching application

by Ikeda, Nariaki, Kato, Kazuo, Kondoh, Kazuo, Kambayashi, Hiroshi, Li, Jiang, Yoshida, Seikoh
Published in Physica status solidi. A, Applications and materials science (01.06.2007)

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Journal Article Conference Proceeding

High-quality SiO2/GaN interface for enhanced operation field-effect transistor

High-quality SiO2/GaN interface for enhanced operation field-effect transistor

by Niiyama, Yuki, Shinagawa, Tatsuyuki, Ootomo, Shinya, Kambayashi, Hiroshi, Nomura, Takehiko, Yoshida, Seikoh
Published in Physica status solidi. A, Applications and materials science (01.06.2007)

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Journal Article Conference Proceeding

A high-power AlGaN/GaN heterojunction field-effect transistor

A high-power AlGaN/GaN heterojunction field-effect transistor

by Yoshida, Seikoh, Ishii, Hirotatsu, Li, Jiang, Wang, Deliang, Ichikawa, Masakazu
Published in Solid-state electronics (01.03.2003)

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Journal Article

Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates

Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates

by Niiyama, Yuki, Kambayashi, Hiroshi, Ootomo, Shinya, Nomura, Takehiko, Yoshida, Seikoh, Chow, Tat-sing Paul
Published in Japanese Journal of Applied Physics (01.09.2008)

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Journal Article

High-performance normally off FET using an AlGaN/GaN heterostructure on Si substrate

High-performance normally off FET using an AlGaN/GaN heterostructure on Si substrate

by Ikeda, Nariaki, Li, Jiang, Takehara, Hironari, Wada, Takahiro, Yoshida, Seikoh
Published in Journal of crystal growth (15.02.2005)

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Journal Article

Electrochemical etching of a conductive GaN crystal for patterning

Electrochemical etching of a conductive GaN crystal for patterning

by Yoshida, Seikoh
Published in Journal of crystal growth (01.11.1997)

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Journal Article

Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature

Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature

by Yoshida, Seikoh, Suzuki, Joe
Published in Japanese Journal of Applied Physics (01.05.1998)

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Journal Article

Buffer breakdown voltage of AlGaN/GaN HFET on a 4 inch Si(111) substrate grown by MOCVD

Buffer breakdown voltage of AlGaN/GaN HFET on a 4 inch Si(111) substrate grown by MOCVD

by Iwami, Masayuki, Kato, Sadahiro, Satoh, Yoshihiro, Sasaki, Hitoshi, Yoshida, Seikoh
Published in Physica status solidi. C (01.06.2007)

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Journal Article

Hexagonal GaN1-xPx growth by laser-assisted metalorganic chemical vapor deposition

Hexagonal GaN1-xPx growth by laser-assisted metalorganic chemical vapor deposition

by KIKAWA, Junjiroh, YOSHIDA, Seikoh, ITOH, Yoshiteru
Published in Journal of crystal growth (01.07.2001)

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Conference Proceeding Journal Article

Crystal growth of nitride-rich GaNP by laser-assisted metalorganic chemical-vapor deposition

Crystal growth of nitride-rich GaNP by laser-assisted metalorganic chemical-vapor deposition

by Yoshida, Seikoh, Kikawa, Junjiroh, Itoh, Yoshiteru
Published in Journal of crystal growth (01.04.2002)

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Journal Article

A Fabrication of Very Low Contact Resistance AlGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy

A Fabrication of Very Low Contact Resistance AlGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy

by Yoshida, Seikoh, Wang, Delian, Ichikawa, Masakazu
Published in Japanese Journal of Applied Physics (15.07.2002)

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Journal Article

C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE

C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE

by Kato, Sadahiro, Satoh, Yoshihiro, Sasaki, Hitoshi, Masayuki, Iwami, Yoshida, Seikoh
Published in Journal of crystal growth (2007)

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Journal Article Conference Proceeding

Electroluminescence studies under forward and reverse bias conditions of a nitride-rich GaN1−xPx SQW structure LED grown by laser-assisted metal-organic chemical vapor deposition

Electroluminescence studies under forward and reverse bias conditions of a nitride-rich GaN1−xPx SQW structure LED grown by laser-assisted metal-organic chemical vapor deposition

by Kikawa, Junjiroh, Yoshida, Seikoh, Itoh, Yoshiteru
Published in Solid-state electronics (01.03.2003)

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Journal Article

Electronic devices using GaN

Electronic devices using GaN

by YOSHIDA, Seikoh
Published in Oyo Buturi (10.07.1999)

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Journal Article

In situ mass spectrometric analysis of surface chemistry in MOMBE growth

In situ mass spectrometric analysis of surface chemistry in MOMBE growth

by SASAKI, M, YOSHIDA, S
Published in Japanese Journal of Applied Physics (1995)

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Conference Proceeding Journal Article

Temperature-programmed scattering (TPS) study on reactivity difference of GaAs and GaAs oxide surfaces

Temperature-programmed scattering (TPS) study on reactivity difference of GaAs and GaAs oxide surfaces

by SASAKI, M, YOSHIDA, S, YAMADA, C
Published in Japanese Journal of Applied Physics (01.10.1993)

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Journal Article

Scattering of pulsed trimethylgallium beam from clean and oxidized GaAs surfaces

Scattering of pulsed trimethylgallium beam from clean and oxidized GaAs surfaces

by SASAKI, M, YOSHIDA, S
Published in Japanese Journal of Applied Physics (1994)

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Journal Article

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