Design and installation of the closed helical divertor in LHD
Masuzaki, S., Shoji, M., Tokitani, M., Murase, T., Kobayashi, M., Morisaki, T., Yonezu, H., Sakamoto, R., Yamada, H., Komori, A.
Published in Fusion engineering and design (01.11.2010)
Published in Fusion engineering and design (01.11.2010)
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Divertor heat and particle control experiments on the large helical device
Masuzaki, S., Kobayashi, M., Akiyama, T., Ohno, N., Morisaki, T., Shoji, M., Tokitani, M., Tanaka, H., Peterson, B.J., Yoshimura, S., Narihara, K., Yamada, I., Yasuhara, R., Murakami, A., Miyazawa, J., Murase, T., Kobuchi, T., Yonezu, H., Kawamura, G., Murakami, I., Takeiri, Y., Yamada, H., Komori, A.
Published in Journal of nuclear materials (01.07.2013)
Published in Journal of nuclear materials (01.07.2013)
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Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy
Umeno, K., Furukawa, Y., Urakami, N., Noma, R., Mitsuyoshi, S., Wakahara, A., Yonezu, H.
Published in Physica. E, Low-dimensional systems & nanostructures (01.09.2010)
Published in Physica. E, Low-dimensional systems & nanostructures (01.09.2010)
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MBE growth of GaAsN/GaP(N) quantum wells with abrupt heterointerfaces for photonics applications on Si substrates
Umeno, K., Furukawa, Y., Wakahara, A., Noma, R., Okada, H., Yonezu, H., Takagi, Y., Kan, H.
Published in Journal of crystal growth (15.03.2009)
Published in Journal of crystal growth (15.03.2009)
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Electrical and luminescence properties of Mg-doped p-type GaPN grown by molecular beam epitaxy
Mitsuyoshi, S., Umeno, K., Furukawa, Y., Urakami, N., Wakahara, A., Yonezu, H.
Published in Physica status solidi. C (01.10.2010)
Published in Physica status solidi. C (01.10.2010)
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Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(1 0 0) substrates
Takagi, Y, Yonezu, H, Samonji, K, Tsuji, T, Ohshima, N
Published in Journal of crystal growth (01.04.1998)
Published in Journal of crystal growth (01.04.1998)
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Point defects in dilute nitride III-N–As and III-N–P
Chen, W.M., Buyanova, I.A., Tu, C.W., Yonezu, H.
Published in Physica. B, Condensed matter (01.04.2006)
Published in Physica. B, Condensed matter (01.04.2006)
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Analysis of quantum levels for self-assembled InGaAsN/GaP quantum dots
Fukami, F., Umeno, K., Furukawa, Y., Urakami, N., Mitsuyoshi, S., Okada, H., Yonezu, H., Wakahara, A.
Published in Physica status solidi. C (01.02.2011)
Published in Physica status solidi. C (01.02.2011)
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Not only vitamin K but also bisphosphonate normalize the serum undercarboxylated osteocalcin level in osteoporosis patients
Yonezu, H, Endo, T, Nagamachi, A, Adachi, K, Inoue, K, Kubo, T
Published in Bone (New York, N.Y.) (01.05.2009)
Published in Bone (New York, N.Y.) (01.05.2009)
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Growth of Si/III–V-N/Si structure with two-chamber molecular beam epitaxy system for optoelectronic integrated circuits
Furukawa, Y., Yonezu, H., Wakahara, A., Ishiji, S., Moon, S.Y., Morisaki, Y.
Published in Journal of crystal growth (01.03.2007)
Published in Journal of crystal growth (01.03.2007)
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Growth of BxAl1-xN layers using decaborane on SiC substrates
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Growth of high-quality AlN with low pit density on SiC substrates
Nakajima, A., Furukawa, Y., Koga, S., Yonezu, H.
Published in Journal of crystal growth (01.05.2004)
Published in Journal of crystal growth (01.05.2004)
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Overview of the Large Helical Device project
Iiyoshi, A, Komori, A, Ejiri, A, Emoto, M, Funaba, H, Goto, M, Ida, K, Idei, H, Inagaki, S, Kado, S, Kaneko, O, Kawahata, K, Kobuchi, T, Kubo, S, Kumazawa, R, Masuzaki, S, Minami, T, Miyazawa, J, Morisaki, T, Morita, S, Murakami, S, Muto, S, Mutoh, T, Nagayama, Y, Nakamura, Y, Nakanishi, H, Narihara, K, Nishimura, K, Noda, N, Ohdachi, S, Ohyabu, N, Oka, Y, Osakabe, M, Ozaki, T, Peterson, B.J, Sagara, A, Sakakibara, S, Sakamoto, R, Sasao, H, Sasao, M, Sato, K, Sato, M, Seki, T, Shimozuma, T, Shoji, M, Suzuki, H, Takeiri, Y, Tanaka, K, Toi, K, Tokuzawa, T, Tsumori, K, Tsuzuki, K, Watanabe, K.Y, Watari, T, Yamada, H, Yamada, I, Yamaguchi, S, Yokoyama, M, Akiyama, R, Chikaraishi, H, Haba, K, Hamaguchi, S, Iima, M, Imagawa, S, Inoue, N, Iwamoto, K, Kitagawa, S, Kodaira, J, Kubota, Y, Maekawa, R, Mito, T, Nagasaka, T, Nishimura, A, Takahashi, C, Takahata, K, Takita, Y, Tamura, H, Tsuzuki, T, Yamada, S, Yamauchi, K, Yanagi, N, Yonezu, H, Hamada, Y, Matsuoka, K, Murai, K, Ohkubo, K, Ohtake, I, Okamoto, M, Satoh, S, Satow, T, Sudo, S, Tanahashi, S, Yamazaki, K, Fujiwara, M, Motojima, O
Published in Nuclear fusion (01.09.1999)
Published in Nuclear fusion (01.09.1999)
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Application of microsize light-emitting diode structure for monolithic optoelectronic integrated circuits
Moon, S. Y., Yonezu, H., Furukawa, Y., Morisaki, Y., Yamada, S., Wakahara, A.
Published in Physica status solidi. A, Applications and materials science (01.06.2007)
Published in Physica status solidi. A, Applications and materials science (01.06.2007)
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Conference Proceeding
Elemental devices, circuits and processes for a monolithic Si/III–V–N alloy OEIC
Yonezu, H., Furukawa, Y., Abe, H., Yoshikawa, Y., Moon, S.-Y., Utsumi, A., Yoshizumi, Y., Wakahara, A., Ohtani, M.
Published in Optical materials (01.02.2005)
Published in Optical materials (01.02.2005)
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Annealing behavior on luminescence properties of self-assembled InGaAsN/GaP quantum dots
Urakami, N., Umeno, K., Furukawa, Y., Fukami, F., Mitsuyoshi, S., Okada, H., Yonezu, H., Wakahara, A.
Published in Physica status solidi. C (01.02.2011)
Published in Physica status solidi. C (01.02.2011)
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MBE growth of highly strained InGaPN/GaPN quantum well with high indium content
Kim, S.M., Furukawa, Y., Yonezu, H., Umeno, K., Wakahara, A.
Published in Journal of crystal growth (01.08.2006)
Published in Journal of crystal growth (01.08.2006)
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