Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality
Lei, Dian, Wang, Wei, Zhang, Zheng, Pan, Jisheng, Gong, Xiao, Liang, Gengchiau, Tok, Eng-Soon, Yeo, Yee-Chia
Published in Journal of applied physics (14.01.2016)
Published in Journal of applied physics (14.01.2016)
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Journal Article
Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications
Ruize Sun, Liang, Yung C., Yee-Chia Yeo, Cezhou Zhao
Published in IEEE transactions on electron devices (01.08.2017)
Published in IEEE transactions on electron devices (01.08.2017)
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Journal Article
Ultra-low specific contact resistivity (1.4 × 10−9 Ω·cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film
Wu, Ying, Luo, Sheng, Wang, Wei, Masudy-Panah, Saeid, Lei, Dian, Liang, Gengchiau, Gong, Xiao, Yeo, Yee-Chia
Published in Journal of applied physics (14.12.2017)
Published in Journal of applied physics (14.12.2017)
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Journal Article
In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector
Wang, Wei, Vajandar, Saumitra, Lim, Sin Leng, Dong, Yuan, D'Costa, Vijay Richard, Osipowicz, Thomas, Tok, Eng Soon, Yeo, Yee-Chia
Published in Journal of applied physics (21.04.2016)
Published in Journal of applied physics (21.04.2016)
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Journal Article
Ballistic Transport Performance of Silicane and Germanane Transistors
Low, Kain Lu, Huang, Wen, Yeo, Yee-Chia, Liang, Gengchiau
Published in IEEE transactions on electron devices (01.05.2014)
Published in IEEE transactions on electron devices (01.05.2014)
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Journal Article
Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions
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Journal Article
Conference Proceeding
Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate
Wang, Wei, Li, Lingzi, Tok, Eng Soon, Yeo, Yee-Chia
Published in Journal of applied physics (14.06.2015)
Published in Journal of applied physics (14.06.2015)
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Journal Article
High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
Wang, Wei, Lei, Dian, Huang, Yi-Chiau, Lee, Kwang Hong, Loke, Wan-Khai, Dong, Yuan, Xu, Shengqiang, Tan, Chuan Seng, Wang, Hong, Yoon, Soon-Fatt, Gong, Xiao, Yeo, Yee-Chia
Published in Optics express (16.04.2018)
Published in Optics express (16.04.2018)
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Journal Article
New materials for post-Si computing: Ge and GeSn devices
Gupta, Suyog, Gong, Xiao, Zhang, Rui, Yeo, Yee-Chia, Takagi, Shinichi, Saraswat, Krishna C.
Published in MRS bulletin (01.08.2014)
Published in MRS bulletin (01.08.2014)
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Journal Article
Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1−xSnx layer on Ge(001) substrate
Wang, Wei, Li, Lingzi, Zhou, Qian, Pan, Jisheng, Zhang, Zheng, Tok, Eng Soon, Yeo, Yee-Chia
Published in Applied surface science (01.12.2014)
Published in Applied surface science (01.12.2014)
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Journal Article
Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate
Lei, Dian, Lee, Kwang Hong, Huang, Yi-Chiau, Wang, Wei, Masudy-Panah, Saeid, Yadav, Sachin, Kumar, Annie, Dong, Yuan, Kang, Yuye, Xu, Shengqiang, Wu, Ying, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
Published in IEEE transactions on electron devices (01.09.2018)
Published in IEEE transactions on electron devices (01.09.2018)
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Journal Article
Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1-x Sn x ) Fin Structure
Wang, Wei, Lei, Dian, Dong, Yuan, Gong, Xiao, Tok, Eng Soon, Yeo, Yee-Chia
Published in Scientific reports (12.05.2017)
Published in Scientific reports (12.05.2017)
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Journal Article
Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study
Yang, Yue, Lu Low, Kain, Wang, Wei, Guo, Pengfei, Wang, Lanxiang, Han, Genquan, Yeo, Yee-Chia
Published in Journal of applied physics (21.05.2013)
Published in Journal of applied physics (21.05.2013)
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Journal Article