Innovative scheme for selective carbon nanotubes integration in via structures
Fayolle, M., Pontcharra, J., Dijon, J., Fournier, A., Okuno, H., Quesnel, E., Muffato, V., Jayet, C., Lugand, J.F., Gautier, P., Vandroux, L., Huet, S., Grampeix, H., Yckache, K., Mariolle, D., Billon, T.
Published in Microelectronic engineering (01.05.2011)
Published in Microelectronic engineering (01.05.2011)
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Conference Proceeding
Double Si nanocrystal layers grown by RPCVD for non-volatile memory applications
Masarotto, L, Molas, G, Jalaguier, E, Gay, G, Colonna, J P, Hartmann, J M, Yckache, K
Published in Semiconductor science and technology (01.02.2011)
Published in Semiconductor science and technology (01.02.2011)
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Ni and Ti silicide oxidation for CMOS applications investigated by XRD, XPS and FPP
Rahman, M.K., Nemouchi, F., Chevolleau, T., Gergaud, P., Yckache, K.
Published in Materials science in semiconductor processing (15.11.2017)
Published in Materials science in semiconductor processing (15.11.2017)
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Journal Article
Influence of polycide deposition on the reliability of wet and nitrided oxides
Yckache, K, Boivin, P, Baiget, F, Kristukat, C, Auriel, G, Sagnes, B, Oualid, J, Glachant, A
Published in Journal of non-crystalline solids (01.04.1999)
Published in Journal of non-crystalline solids (01.04.1999)
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Impact of vacuum anneal at low temperature on Al2O3/In-based III–V interfaces
Martinez, E., Grampeix, H., Desplats, O., Herrera-Gomez, A., Ceballos-Sanchez, O., Guerrero, J., Yckache, K., Martin, F.
Published in Chemical physics letters (29.06.2012)
Published in Chemical physics letters (29.06.2012)
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Reliability of nitrided wet silicon dioxide thin films in WSi2 or TaSi2 polycide process : influence of the nitridation temperature
Yckache, K., Boivin, P., Baiget, F., Radja, S., Auriel, G., Sagnes, B., Ouahd, J., Glachant, A.
Published in Microelectronics and reliability (01.06.1998)
Published in Microelectronics and reliability (01.06.1998)
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Conference Proceeding
Engineering of the nitride charge trapping layer for non-volatile memory
Colonna, J-P, Nowak, E, Molas, G, Bocquet, M, Gely, M, Rochat, N, Licitra, C, Barnes, J-P, Veillerot, M, Kies, R, Yckache, K
Published in 2010 27th International Conference on Microelectronics Proceedings (01.05.2010)
Published in 2010 27th International Conference on Microelectronics Proceedings (01.05.2010)
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Conference Proceeding
High performance polysilicon nanowire NEMS for CMOS embedded nanosensors
Ouerghi, I., Philippe, J., Duraffourg, L., Laurent, L., Testini, A., Benedetto, K., Charvet, A. M., Delaye, V., Masarotto, L., Scheiblin, P., Reita, C., Yckache, K., Ladner, C., Ludurczak, W., Ernst, T.
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
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Conference Proceeding
FDSOI: A solution to suppress boron deactivation in low temperature processed devices
Xu, C., Batude, P., Sklenard, B., Vinet, M., Mouis, M., Previtali, B., Liu, F. Y., Guerrero, J., Yckache, K., Rivallin, P., Mazzocchi, V., Cristoloveanu, S., Faynot, O., Poiroux, T.
Published in 2012 12th International Workshop on Junction Technology (01.05.2012)
Published in 2012 12th International Workshop on Junction Technology (01.05.2012)
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Conference Proceeding
Integration of a plasma doping PULSION® process into a fully depleted SOI transistor flow chart
Duchaine, J., Gonzatti, F., Torregrosa, F., Etienne, H., Felch, S., Milesi, F., Yckache, K., Spiegel, Y., Claverie, A.
Published in 11th International Workshop on Junction Technology (IWJT) (01.06.2011)
Published in 11th International Workshop on Junction Technology (IWJT) (01.06.2011)
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Conference Proceeding
Diffusion and activation of Boron and Phosphorus in preamorphized and crystalline Germanium using ultra fast spike anneal
Mazzocchi, V., Pages, X., Py, M., Barnes, J.P., Vanormelingen, K., Hutin, L., Truche, R., Vermont, P., Vinet, M., Le Royer, C., Yckache, K.
Published in 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (01.09.2009)
Published in 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (01.09.2009)
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Conference Proceeding
Boron and Phosphorus dopant activation in Germanium using laser annealing with and without preamorphization implant
Mazzocchi, V., Sabatier, C., Py, M., Huet, K., Boniface, C., Barnes, J.-P., Hutin, L., Delayer, V., Morel, D., Vinet, M., Le Royer, C., Venturini, J., Yckache, K.
Published in 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (01.09.2009)
Published in 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (01.09.2009)
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Conference Proceeding
Effect of Nitridation for High-K Layers by ALCVDTM in Order to Decrease the Trapping in Non Volatile Memories
Grampeix, Helen, Colonna, Jean-Philippe, Molas, Gabriel, Bocquet, M., Martin, F., Rochat, N., Martinez, E., Licitra, C., Veyron, T., Papon, A.-M., Gely, M., Yckache, K.
Published in Meeting abstracts (Electrochemical Society) (28.09.2007)
Published in Meeting abstracts (Electrochemical Society) (28.09.2007)
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Journal Article
Performance and Reliability of Si-Nanocrystal Double Layer Memory Devices with High-k Control Dielectrics
Gay, G., Molas, G., Bocquet, M., Jalaguier, E., Gely, M., Masarotto, L., Colonna, J.P., Grampeix, H., Martin, F., Brianceau, P., Vidal, V., Kies, R., Yckache, K., De Salvo, B., Ghibaudo, G., Baron, T., Bongiorno, C., Lombardo, S.
Published in 2009 IEEE International Memory Workshop (01.05.2009)
Published in 2009 IEEE International Memory Workshop (01.05.2009)
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Conference Proceeding
Influence of oxide nitridation and silicide deposition on the generation rates of charges created in the EEPROM tunnelling gate oxide
Yckache, K, Boivin, P, Baiget, F, Sagnes, B, Oualid, J, Glachant, A
Published in Materials for Advanced Metallization (MAM), European Workshop (29.06.1998)
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Published in Materials for Advanced Metallization (MAM), European Workshop (29.06.1998)
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