First experimental demonstration of SiC super-junction (SJ) structure by multi-epitaxial growth method
Kosugi, Ryoji, Sakuma, Yuuki, Kojima, Kazutoshi, Itoh, Sachiko, Nagata, Akiyo, Yatsuo, Tsutomu, Tanaka, Yasunori, Okumura, Hajime
Published in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2014)
Published in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2014)
Get full text
Conference Proceeding
Evaluation of Refilled Channel Regions in 4H-SiC Buried Gate Static Induction Transistors
Takatsuka, Akio, Tanaka, Yasunori, Yano, Koji, Yatsuo, Tsutomu, Arai, Kazuo
Published in Japanese Journal of Applied Physics (01.03.2010)
Published in Japanese Journal of Applied Physics (01.03.2010)
Get full text
Journal Article
Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance
Yano, Koji, Yamamoto, Masayuki, Tanaka, Yasunori, Yatsuo, Tsutomu
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
Get full text
Journal Article
Experimental demonstration of SiC screen grid vertical JFET (SiC-SGVJFET) having a ultra-low Crss
Yano, Koji, Ishikawa, Tsuyoshi, Tanaka, Yasunori, Yatsuo, Tsutomu, Yamamoto, M.
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Get full text
Conference Proceeding
Journal Article
Shape Transformation of 4H-SiC Microtrenches by Hydrogen Annealing
Takatsuka, Akio, Tanaka, Yasunori, Yano, Koji, Yatsuo, Tsutomu, Ishida, Yuuki, Arai, Kazuo
Published in Japanese Journal of Applied Physics (01.04.2009)
Published in Japanese Journal of Applied Physics (01.04.2009)
Get full text
Journal Article
700-V 1.0-mΩ · cm2 buried gate SiC-SIT (SiC-BGSIT)
TANAKA, Yasunori, OKAMOTO, Mitsuo, TAKATSUKA, Akio, ARAI, Kazuo, YATSUO, Tsutomu, YANO, Koji, KASUGA, Masanobu
Published in IEEE electron device letters (2006)
Get full text
Published in IEEE electron device letters (2006)
Journal Article
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
YATSUO, TSUTOMU, KATO, MAKOTO, HARADA, SHINSUKE, OKAMOTO, MITSUO, FUKUDA, KENJI
Year of Publication 24.04.2008
Get full text
Year of Publication 24.04.2008
Patent
Lateral RESURF MOSFET fabricated on 4H-SiC(0001/sup ~/) C-face
Okamoto, M., Suzuki, S., Kato, M., Yatsuo, T., Fukuda, K.
Published in IEEE electron device letters (01.06.2004)
Published in IEEE electron device letters (01.06.2004)
Get full text
Journal Article
1200 V, 35 A SiC-BGSIT with improved blocking gain of 480
Tanaka, Y, Takatsuka, A, Yatsuo, T, Arai, K, Yano, K
Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
Get full text
Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
Conference Proceeding
A 4.3−mΩcm2, 1100-V normally-off IEMOSFET on SiC
Harada, Shinsuke, Okamoto, Mitsuo, Yatsuo, Tsutomu, Fukuda, Kenji, Arai, Kazuo
Published in Electronics and communications in Japan (01.03.2008)
Published in Electronics and communications in Japan (01.03.2008)
Get full text
Journal Article
A 4.3−mΩcm 2 , 1100‐V normally‐off IEMOSFET on SiC
Harada, Shinsuke, Okamoto, Mitsuo, Yatsuo, Tsutomu, Fukuda, Kenji, Arai, Kazuo
Published in Electronics and communications in Japan (01.03.2008)
Published in Electronics and communications in Japan (01.03.2008)
Get full text
Journal Article