Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al0.05Ga0.95N
Sugiyama, Toru, Iida, Daisuke, Yasuda, Toshiki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Applied physics express (01.12.2013)
Published in Applied physics express (01.12.2013)
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Electron and hole accumulations at GaN/AlInN/GaN interfaces and conductive n-type AlInN/GaN distributed Bragg reflectors
Yoshida, Shotaro, Ikeyama, Kazuki, Yasuda, Toshiki, Furuta, Takashi, Takeuchi, Tetsuya, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy
Katsuno, Shota, Yasuda, Toshiki, Hagiwara, Koudai, Koide, Norikatsu, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi
Published in Japanese Journal of Applied Physics (16.12.2016)
Published in Japanese Journal of Applied Physics (16.12.2016)
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Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures
Yasuda, Toshiki, Yagi, Kouta, Suzuki, Tomoyuki, Nakashima, Tsubasa, Watanabe, Masahiro, Takeuchi, Tetsuya, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
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Polarization dilution in a Ga-polar UV-LED to reduce the influence of polarization charges
Yasuda, Toshiki, Hayashi, Kento, Katsuno, Syouta, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu, Amano, Hiroshi
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
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Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template
Yasuda, Toshiki, Takeuchi, Tetsuya, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi
Published in Applied physics express (01.02.2017)
Published in Applied physics express (01.02.2017)
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High quality Al sub(0.99) Ga sub(0.01) N layers on sapphire substrates grown at 1150 [degrees]C by metalorganic vapor phase epitaxy
Katsuno, Shota, Yasuda, Toshiki, Hagiwara, Koudai, Koide, Norikatsu, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi
Published in Japanese Journal of Applied Physics (01.01.2017)
Published in Japanese Journal of Applied Physics (01.01.2017)
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Journal Article
High quality Al 0.99 Ga 0.01 N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy
Katsuno, Shota, Yasuda, Toshiki, Hagiwara, Koudai, Koide, Norikatsu, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi
Published in Japanese Journal of Applied Physics (01.01.2017)
Published in Japanese Journal of Applied Physics (01.01.2017)
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GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
IIDA KAZUYOSHI, KAMIYAMA SATOSHI, KOJIMA HISANORI, AKASAKI ISAMU, TAKEUCHI TETSUYA, YASUDA TOSHIKI, IWATANI MOTOAKI
Year of Publication 06.06.2019
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Year of Publication 06.06.2019
Patent
Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al 0.05 Ga 0.95 N
Sugiyama, Toru, Iida, Daisuke, Yasuda, Toshiki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Applied physics express (01.12.2013)
Published in Applied physics express (01.12.2013)
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Journal Article
NITRIDE SEMICONDUCTOR LASER ELEMENT
KAMIYAMA SATOSHI, AKASAKI ISAMU, TAKEUCHI TETSUYA, YASUDA TOSHIKI, IWATANI MOTOAKI, KAWASE YUTA
Year of Publication 21.06.2018
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Year of Publication 21.06.2018
Patent
Quantum reservoir computing with repeated measurements on superconducting devices
Yasuda, Toshiki, Suzuki, Yudai, Kubota, Tomoyuki, Nakajima, Kohei, Gao, Qi, Zhang, Wenlong, Shimono, Satoshi, Nurdin, Hendra I, Yamamoto, Naoki
Year of Publication 10.10.2023
Year of Publication 10.10.2023
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